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Número de pieza | 2N5907 | |
Descripción | Low Leakage | |
Fabricantes | Micross | |
Logotipo | ||
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No Preview Available ! 2N5907
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
The 2N5907 is a high-performance monolithic dual
JFET featuring tight matching and low drift over
temperature specifications, and is targeted for use in a
wide range of precision instrumentation applications
where tight tracking is required.
FEATURES
LOW DRIFT
ULTRA LOW LEAKAGE
LOW PINCHOFF
ABSOLUTE MAXIMUM RATINGS
| VGS1‐2 / T| = 5µV/°C TYP.
IG = 150fA TYP.
Vp = 2V TYP.
The hermetically sealed TO-78 package is well suited
for hi-reliability and harsh environment applications.
@ 25°C (unless otherwise noted)
Maximum Temperatures
(See Packaging Information).
Storage Temperature
Operating Junction Temperature
‐65°C to +150°C
+150°C
Maximum Voltage and Current for Each Transistor – Note 1
‐VGSS
Gate Voltage to Drain or Source
40V
‐VDSO
Drain to Source Voltage
40V
‐IG(f) Gate Forward Current
10mA
2N5907 Benefits:
‐IG Gate Reverse Current
Maximum Power Dissipation
10µA
Tight Tracking
Good matching
Ultra Low Leakage
Low Drift
Device Dissipation @ Free Air – Total 40mW @ +125°C
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
| VGS1‐2 / T| max.
DRIFT VS.
TEMPERATURE
10 µV/°C VDG=10V, ID=30µA
TA=‐55°C to +125°C
| V GS1‐2 | max.
OFFSET VOLTAGE 5
mV VDG=10V, ID=30µA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
TYP. MAX.
UNITS
CONDITIONS
BVGSS
BVGGO
Breakdown Voltage
Gate‐To‐Gate Breakdown
TRANSCONDUCTANCE
40
40
60 ‐‐
‐‐ ‐‐
V VDS = 0 ID=1nA
V IG= 1nA ID= 0 IS= 0
YfSS Full Conduction 70
YfS
|YFS1‐2 / Y FS|
IDSS
Click|IDSS1‐2 / IDSS|
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
50
‐‐
60
‐‐
GATE VOLTAGE
300 500
µmho
VDG= 10V VGS= 0V f = 1kHz
To Buy100 200
1 5
400 1000
2 5
µmho
%
µA
%
VDG= 10V ID= 30µA f = 1kHz
VDG= 10V VGS= 0V
VGS(off) or Vp
Pinchoff voltage
0.6 2 4.5
V
VDS= 10V ID= 1nA
VGS(on)
Operating Range
‐‐ ‐‐ 4
V VDS=10V ID=30µA
GATE CURRENT
‐IGmax.
Operating
‐‐ ‐‐ 1
pA
VDG= 10V ID= 30µA
‐IGmax.
‐IGSSmax.
‐IGSSmax.
IGGO
High Temperature
At Full Conduction
High Temperature
Gate‐to‐Gate Leakage
OUTPUT CONDUCTANCE
‐‐
‐‐
‐‐
‐‐
‐‐ 1
‐‐ 2
‐‐ 5
1 ‐‐
nA TA= +125°C
pA VDS =0V VGS= 20V
nA TA= +125°C
pA VGG= 20V
YOSS
YOS
|YOS1‐2|
Full Conduction
Operating
Differential
‐‐ ‐‐ 5
‐‐ 0.1 0.1
µmho
‐‐
0.01
0.1
VDG= 10V VGS= 0V
VDG= 10V ID=30µA
COMMON MODE REJECTION
CMR
CMR
NF
‐20 log |∆VGS1‐2/∆VDS|
‐20 log |∆VGS1‐2/∆VDS|
NOISE
Figure
‐‐ 90 ‐‐
‐‐ 90 ‐‐
‐‐ ‐‐ 1
dB ∆VDS = 10 to 20V ID=30µA
∆VDS = 5 to 10V ID=30µA
VDS= 10V VGS= 0V RG= 10MΩ
dB f= 100Hz NBW= 6Hz
en
Voltage
‐‐
20 70
nV/√Hz
VDG=10V ID=30µA f=10Hz NBW=1Hz
CAPACITANCE
CISS Input ‐‐ ‐‐ 3 VDS= 10V VGS= 0V f= 1MHz
CRSS
Reverse Transfer
‐‐ ‐‐ 1.5
pF
CDD
Drain‐to‐Drain
‐‐ ‐‐ 0.1
VDG = 20V ID=30µA
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
TO-78 (Bottom View)
Micross Components Europe
Available Packages:
2N5907 in TO-78
2N5907 available as bare die
Please contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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PDF Descargar | [ Datasheet 2N5907.PDF ] |
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