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PDF 2N5019 Data sheet ( Hoja de datos )
| Número de pieza | 2N5019 | |
| Descripción | Switching | |
| Fabricantes | Micross | |
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2N5019
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N5019
The 2N5019 is a single P-Channel JFET switch
This p-channel analog switch is designed to provide low
on-resistance and fast switching.
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5019
ZERO OFFSET VOLTAGE
The hermetically sealed TO-18 package is well suited
for hi-reliability and harsh environment applications.
LOW ON RESISTANCE
ABSOLUTE MAXIMUM RATINGS
rDS(on) ≤ 150Ω
(See Packaging Information).
@ 25°C (unless otherwise noted)
2N5019 Benefits:
Low Insertion Loss
No offset or error voltage generated by closed
switch
Purely resistive
2N5019 Applications:
Analog Switches
Commutators
Choppers
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
‐55°C to +200°C
‐55°C to +200°C
500mW
IG = ‐50mA
VGDS = 30V
VGSS = 30V
2N5019 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP. MAX UNITS
CONDITIONS
BVGSS
VGS(off)
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
30 ‐‐
‐‐ ‐‐
‐‐
5 V
IG = 1µA, VDS = 0V
VDS = ‐15V, ID = ‐1µA
VDS(on)
Drain to Source On Voltage
‐‐ ‐‐ ‐0.5
VGS = 0V, ID = ‐3mA
IDSS Drain to Source Saturation Current (Note 2) ‐5 ‐‐ ‐‐ mA
VDS = ‐20V, VGS = 0V
IGSS
ID(off)
IDGO
ClickrDS(on)
Gate Reverse Current
Drain Cutoff Current
Drain Reverse Current
Drain to Source On Resistance
To‐‐ ‐‐ 2
‐‐ ‐‐ ‐10
‐‐ ‐‐ ‐10
‐‐ ‐‐ ‐2
‐‐ ‐‐ 150
2N5019 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
BuynA VGS = 15V, VDS = 0V
VDS = ‐15V, VGS = 12V
µA VDS = ‐15V, VGS = 7V
nA VDG = ‐15V, IS = 0A
Ω ID = ‐1mA, VGS = 0V
SYMBOL
CHARACTERISTIC
MIN TYP. MAX UNITS
CONDITIONS
rDS(on)
Ciss
Drain to Source On Resistance
Input Capacitance
‐‐ ‐‐ 150 Ω
‐‐ ‐‐ 45 pF
ID = 0A, VGS = 0V, f = 1kHz
VDS = ‐15V, VGS = 0V, f = 1MHz
Crss
Reverse Transfer Capacitance
‐‐ ‐‐ 10
VDS = 0V, VGS = 7V, f = 1MHz
2N5019 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
CONDITIONS
td(on)
tr
td(off)
tf
Turn On Time
Turn On Rise Time
Turn Off Time
Turn Off Fall Time
15
75
ns
25
100
VGS(L) = 7V
VGS(H) = 0V
See Switching Circuit
Note 1 ‐ Absolute maximum ratings are limiting values above which 2N5019 servicea b i l i t y m a y b e im p a i r e d .
N o t e 2 – P u l s e t e s t : P W ≤ 3 0 0 µ s , D u t y C y c l e ≤ 3 % SWITCHING TEST CIRCUIT
2N5019 SWITCHING CIRCUIT PARAMETERS
VDD ‐6V
VGG 8V
RL 1.8kΩ
RG 390Ω
ID(on)
‐3mA
Micros s Components E urope
Available Packages:
2N5019 in TO-18
2N5019 in bare die.
TO-18 (Bottom View)
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility
is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication
or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx
1 page | ||
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| PDF Descargar | [ Datasheet 2N5019.PDF ] | |
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