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2N5018 fiches techniques PDF

Micross - Switching

Numéro de référence 2N5018
Description Switching
Fabricant Micross 
Logo Micross 





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2N5018 fiche technique
2N5018
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N5018
The 2N5018 is a single P-Channel JFET switch
This p-channel analog switch is designed to provide low
on-resistance and fast switching.
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX 2N5018 
ZERO OFFSET VOLTAGE 
The hermetically sealed TO-18 package is well suited
for hi-reliability and harsh environment applications.
LOW ON RESISTANCE 
ABSOLUTE MAXIMUM RATINGS  
rDS(on) ≤ 75Ω 
(See Packaging Information).
@ 25°C (unless otherwise noted) 
2N5018 Benefits:
ƒ Low Insertion Loss
ƒ No offset or error voltage generated by closed
switch
ƒ Purely resistive
2N5018 Applications:
ƒ Analog Switches
ƒ Commutators
ƒ Choppers
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation  
MAXIMUM CURRENT
Gate Current (Note 1) 
MAXIMUM VOLTAGES 
Gate to Drain Voltage 
Gate to Source Voltage 
55°C to +200°C 
55°C to +200°C 
500mW 
IG = ‐50mA 
VGDS = 30V 
VGSS = 30V 
  
2N5018 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN  TYP.  MAX  UNITS 
CONDITIONS 
BVGSS 
VGS(off) 
Gate to Source Breakdown Voltage 
Gate to Source Cutoff Voltage 
30  ‐‐ 
‐‐   
‐‐  ‐‐  10  V 
IG = 1µA,   VDS = 0V 
VDS = ‐15V, ID = ‐1µA 
VDS(on) 
Drain to Source On Voltage 
‐‐  ‐‐  ‐0.5 
VGS = 0V, ID = ‐6mA 
IDSS  Drain to Source Saturation Current (Note 2)  ‐10 
‐‐ 
‐‐  mA 
VDS = ‐20V, VGS = 0V 
IGSS 
ID(off) 
IDGO 
ClickrDS(on) 
Gate Reverse Current 
Drain Cutoff Current 
Drain Reverse Current 
Drain to Source On Resistance 
To‐‐  ‐‐  2 
‐‐  ‐‐  ‐10 
‐‐  ‐‐  ‐10 
‐‐  ‐‐  ‐2 
‐‐  ‐‐  75 
2N5018 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
BuynA  VGS = 15V,  VDS = 0V 
VDS = ‐15V, VGS = 12V 
µA  VDS = ‐15V, VGS = 7V 
nA  VDG = ‐15V, IS = 0A 
Ω  ID = ‐1mA,   VGS = 0V 
SYMBOL 
CHARACTERISTIC 
MIN  TYP.  MAX  UNITS 
CONDITIONS 
rDS(on) 
Ciss 
Drain to Source On Resistance 
Input Capacitance 
‐‐  ‐‐  75  Ω 
‐‐  ‐‐  45  pF 
ID = 0A,   VGS = 0V,   f = 1kHz 
VDS = ‐15V, VGS = 0V, f = 1MHz 
Crss 
Reverse Transfer Capacitance 
‐‐  ‐‐  10 
VDS = 0V, VGS = 12V, f = 1MHz 
2N5018 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
  UNITS 
CONDITIONS 
td(on) 
tr 
td(off) 
tf 
Turn On Time 
Turn On Rise Time 
Turn Off Time 
Turn Off Fall Time 
15   
20   
ns 
15 
50 
VGS(L) = 12V 
VGS(H) = 0V 
 
See Switching Circuit 
Note 1 ‐  Absolute maximum ratings are limiting values above which 2N5018 servicea  b  i l i t y    m   a  y   b  e   im    p  a  i r e  d  .                                                                           
 N  o   t e    2       P  u  l s  e    t e  s  t :   P  W       3  0  0    µ  s  ,   D  u  t y    C  y  c  l e   ≤    3  %                                                                                                                                  SWITCHING TEST CIRCUIT
2N5018 SWITCHING CIRCUIT PARAMETERS                                                                                                                          
VDD  ‐6V 
VGG  12V 
RL  910Ω 
RG  220Ω 
ID(on) 
6mA 
  
Micros s Components E  urope
 
 
 
 
 
 
 
Available Packages:
2N5018 in TO-18
2N5018 in bare die.
TO-18 (Bottom View)
Please contact Micross for full
package and die dimensions
    
 
 
 
Tel: +44 1603 788967
      Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility
is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication
or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx

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