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Numéro de référence | 2N3958 | ||
Description | Low Noise | ||
Fabricant | Micross | ||
Logo | |||
1 Page
2N3958
MONOLITHIC DUAL
N-CHANNEL JFET
The 2N3958 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
The 2N3958 family are matched JFET pairs for
differential amplifiers. The 2N3958 family of general
purpose JFETs is characterized for low and medium
frequency differential amplifiers requiring low offset
voltage, drift, noise and capacitance
FEATURES
LOW DRIFT
LOW LEAKAGE
LOW NOISE
ABSOLUTE MAXIMUM RATINGS
|∆ VGS1‐2 /∆T|= 5µV/°C max.
IG = 20pA TYP.
en = 10nV/√Hz TYP.
The 2N3958 family also exhibits low capacitance - 6pF
max and a spot noise figure of -0.5dB max. The part
offers a superior tracking ability.
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
‐65°C to +200°C
The hermetically sealed TO-71 and TO-78 packages
are well suited for high reliability and harsh environment
applications.
(See Packaging Information).
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor – Note 1
‐VGSS
Gate Voltage to Drain or Source
‐VDSO
Drain to Source Voltage
‐IG(f) Gate Forward Current
Maximum Power Dissipation
60V
60V
50mA
Device Dissipation @ Free Air – Total 400mW @ 25°C
2N3958 Applications:
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
Wideband Differential Amps
High Input Impedance Amplifiers
SYMBOL
| V GS1‐2 / T| max.
| V GS1‐2 | max.
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
CHARACTERISTICS
DRIFT VS.
TEMPERATURE
OFFSET VOLTAGE
VALUE UNITS
100 µV/°C
25 mV
CONDITIONS
VDG=20V, ID=200µA
TA=‐55°C to +125°C
VDG=20V, ID=200µA
SYMBOL
CHARACTERISTICS
MIN.
TYP. MAX.
UNITS
CONDITIONS
BVGSS
Breakdown Voltage
60
BVGGO
Gate‐To‐Gate Breakdown
60
TRANSCONDUCTANCE
YfSS
Full Conduction
1000
YfS
|YFS1‐2 / Y FS|
IDSS
Click|IDSS1‐2 / IDSS|
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
500
‐‐
0.5
‐‐
GATE VOLTAGE
VGS(off) or Vp
Pinchoff voltage
1
VGS(on)
Operating Range
0.5
GATE CURRENT
‐‐ ‐‐
V
VDS = 0 ID=1µA
‐‐ ‐‐
V I G= 1nA ID= 0 IS= 0
2000 3000
µmho
VDG= 20V VGS= 0V f = 1kHz
To Buy700 1000
0.6 3
2 5
1 5
µmho
%
mA
%
VDG= 20V ID= 200µA
VDG= 20V VGS= 0V
2 4.5
V
VDS= 20V ID= 1nA
‐‐ 4
V VDS=20V ID=200µA
‐IG
‐IG
‐IG
‐IGSS
YOSS
YOS
|YOS1‐2|
Operating
High Temperature
Reduced VDG
At Full Conduction
OUTPUT CONDUCTANCE
Full Conduction
Operating
Differential
COMMON MODE REJECTION
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
20
‐‐
5
‐‐
‐‐
0.1
0.01
50
50
‐‐
100
5
1
0.1
pA
nA
pA
pA
µmho
µmho
µmho
VDG= 20V ID= 200µA
TA= +125°C
VDG= 10V ID= 200µA
VDG= 20V VDS= 0
VDG= 20V VGS= 0V
VDG= 20V ID= 200µA
CMR
‐20 log | VGS1‐2/ VDS|
‐‐ 100 ‐‐
dB
∆VDS = 10 to 20V ID=200µA
CMR
‐20 log | VGS1‐2/ VDS|
‐‐ 75 ‐‐
dB
∆VDS = 5 to 10V ID=200µA
NOISE
VDS= 20V VGS= 0V RG= 10MΩ
NF
Figure
‐‐ ‐‐ 0.5
dB
f= 100Hz NBW= 6Hz
en
Voltage
‐‐
‐‐ 15
nV/√Hz
VDS=20V ID=200µA f=10Hz NBW=1Hz
CAPACITANCE
CISS Input ‐‐ ‐‐ 6 pF VDS= 20V VGS= 0V f= 1MHz
CRSS
Reverse Transfer
‐‐ ‐‐ 2
pF
CDD
Drain‐to‐Drain
‐‐ 0.1 ‐‐
pF
VDG= 20V ID= 200µA
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
TO-71 / TO-78 (Bottom View)
Micross Components Europe
Available Packages:
2N3958 in TO-71 / TO-78
2N3958 available as bare die
Please contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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Pages | Pages 1 | ||
Télécharger | [ 2N3958 ] |
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