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Semikron International - (SB1520S - SB15100S) Schottky barrier rectifier diodes

Numéro de référence SB1530S
Description (SB1520S - SB15100S) Schottky barrier rectifier diodes
Fabricant Semikron International 
Logo Semikron International 





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SB1530S fiche technique
SB 1520S ... SB 15100S
Type
Repetitive
peak
reverse
voltage
Surge peak
reverse
voltage
Max.
reverse
recovery
time
Max.
forward
voltage
Max.
forward
voltage
Axial Lead Diode
Schottky barrier rectifier
diodes
Forward Current: 15 A
Reverse Voltage: 20 to 100 V
SB 1520S ... SB 15100S
Features
Max. solder temperature: 260°C
Plastic material has UL
classification 94V-0
Electrostatic discharge immunity
test IEC 1000-4-2 (C=150 pF, R=150
Ohm): voltage class 20 kV
Typical Applications*
• Designed as Bypass Diodes for Solar
Panels, protection application
Mechanical Data
• Plastic case: 5,4 x 7,5 [mm]
• Weight approx.: 1,4 g
• Terminals: plated terminals solderable
per MIL-STD-750
• Mounting position: any
• Standard packaging: 1250 pieces per
ammo
Footnotes
1) IF = - A, IR = - A, IRR = - A
2) IF = 5 A, Tj = 25 °C
3) IF = 15 A, Tj = 25 °C
4) Valid, if leads are kept at TA at a distance
of 10 mm from case
5) Max. junction temperature Tj 200 °C in
bypass mode / DC forward mode
6) Thermal resistance from junction to lead/
terminal at distance 0 mm from case
VRRM
VRSM
trr1)
VF2)
VF3)
VV
ns V
V
SB 1520S 20
20
-
0,43 0,52
SB 1530S 30
30
-
0,43 0,52
SB 1540S 40
40
-
0,43 0,52
SB 1545S 45
45
-
0,43 0,52
SB 1550S 50
50
-
0,6 -
SB 1560S 60
60
-
0,6 -
SB 1590S 90
90
-
0,74 -
SB 15100S 100
100
-
0,74 -
Absolute Maximum Ratings
Symbol Conditions
Ta = 25 °C, unless otherwise specified
IFAV R-load, 4), Ta = 50 °C
IFRM
f > 15 Hz, 4)
IFSM half sinus-wave tp = 10 ms
Ta = 25 °C
tp = 8.3 ms
i2t
Ta = 25 °C
tp = 10 ms
tp = 8.3 ms
Tj Operating junction temperature
Tj DC forward (bypass) mode 5)
Tstg Storage temperature
Values
15
60
320
512
-50 ... +150
-50 ... +200
-50 ... +175
Unit
A
A
A
A
A²s
A²s
°C
°C
°C
Characteristics
Symbol Conditions
min. typ. max. Unit
Ta = 25 °C, unless otherwise specified
IR Tj = 25 °C, VR = VRRM
IR Tj = 100 °C, VR = VRRM
Cj
at 1 MHz and applied reverse voltage
of 4 V
ERSM
L = 60 mH, Tj = 25 °C, inductive load
switched off
Rthja
RthjL
4)
6)
500 µA
25 mA
- pF
- mJ
- K/W
4 K/W
Diode
© by SEMIKRON
Rev. 3 – 21.01.2011
1

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