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PDF IRFBL3703 Data sheet ( Hoja de datos )
| Número de pieza | IRFBL3703 | |
| Descripción | SMPS MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 93841
SMPS MOSFET
IRFBL3703
Applications
l Synchronous Rectification in High
Power High Frequency DC/DC Converters
HEXFET® Power MOSFET
VDSS
30V
RDS(on) max ID
0.0025Ω
260A
Benefits
l >1mm lower profile than D2Pak
l Same footprint as D2Pak
l Low Gate Impedance to Reduce Switching
Losses
l Ultra Low On-Resistance
l Fully Avalanche Rated
Super-D2PakTM
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
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VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
260
180
1000
300
3.8
2.0
± 20
5.0
-55 to + 175
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Forward and Bridge Converters with Synchronous Rectification for Telecom and
Industrial Applications
Notes through are on page 8
www.irf.com
1
4/5/00
1 page  
IRFBL3703
300
LIMITED BY PACKAGE
250
200
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
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0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
t1, Rectangular Pulse Duration (sec)
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
0.1
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFBL3703.PDF ] | |
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