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Número de pieza | FCA16N60N | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FCA16N60N (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! FCA16N60N
N-Channel MOSFET
600V, 16A, 0.170Ω
Features
• RDS(on) = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A
• Ultra low gate charge ( Typ. Qg = 40.2nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
August 2009
SupreMOSTM
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G DS
TO-3PN
FCA Series
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EASwww.DataSheet4U.net
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 3)
G
S
FCA16N60N
600
±30
16.0
10.1
48.0
355
5.3
1.34
100
20
134.4
1.08
-55 to +150
300
FCA16N60N
0.93
0.24
40
Units
V
V
A
A
mJ
A
mJ
V/ns
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FCA16N60N Rev. A1
1
www.fairchildsemi.com
1 page Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
www.DataSheet4U.net
Unclamped Inductive Switching Test Circuit & Waveforms
FCA16N60N Rev. A1
5 www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FCA16N60N.PDF ] |
Número de pieza | Descripción | Fabricantes |
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