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PDF HDD16M64B8 Data sheet ( Hoja de datos )
| Número de pieza | HDD16M64B8 | |
| Descripción | DDR SDRAM Module 128Mbyte | |
| Fabricantes | Hanbit Electronics | |
| Logotipo |  |
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HANBit
HDD16M64B8
DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks,
4K Ref. SO-DIMM
Part No. HDD16M64B8
GENERAL DESCRIPTION
The HDD16M64B8 is a 16M x 64 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module.
The module consists of eight CMOS 16M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K
EEPROM in 8-pin TSSOP package on a 200-pin glass-epoxy. Four 0.1uF decoupling capacitors are mounted on the printed
circuit board in parallel for each DDR SDRAM. The HDD16M64B8 is a SO-DIMM(Small Outline Dual in line Memory
Module) .Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allows the same device
to be useful for a variety of high bandwidth, high performance memory system applications. All module components may be
powered from a single 2.5V DC power supply and all inputs and outputs are SSTL_2 compatible.
FEATURES
• Part Identification
HDD16M64B8 – 10A : 100MHz (CL=2)
HDD16M64B8 – 13A : 133MHz (CL=2)
HDD16M64B8 – 13B : 133MHz (CL=2.5)
• 128MB(16Mx64) Unbuffered DDR SO-DIMM based on 16Mx8 DDR SDRSM
• 2.5V ± 0.2V VDD and VDDQ power supply
• Auto & self refresh capability (4096 Cycles/64ms)
• All input and output are compatible with SSTL_2 interface
• Data(DQ), Data strobes and write masks latched on the rising and falling edges of the clock
www.DataSheet4U.net
• All Addresses and control inputs except Data(DQ), Data strobes and Data masks latched on the rising edges of the clock
• MRS cycle with address key programs
- Latency (Access from column address) : 2, 2.5
- Burst length : 2, 4, 8
- Data scramble : Sequential & Interleave
• Data(DQ), Data strobes and write masks latched on the rising and falling edges of the clock
• All Addresses and control inputs except Data(DQ), Data strobes and Data masks latched on the rising edges of the clock
• The used device is 4M x 8bit x 4Banks DDR SDRAM
URL : www.hbe.co.kr
REV 1.0 (August. 2002)
1 HANBit Electronics Co.,Ltd.
1 page  
HANBit
HDD16M64B8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Voltage on VDDQ supply relative to Vss
Storage temperature
VIN, VOUT
VDD
VDDQ
TSTG
-0.5 ~ 3.6
-1.0 ~ 3.6
-0.5 ~ 3.6
-55 ~ +150
Power dissipation
PD 8.0
Short circuit current
IOS 50
Notes: Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
(Recommended operating conditions (Voltage referenced to Vss = 0V, TA = 0 to 70°C) )
PARAMETER
SYMBOL
MIN
MAX
Supply Voltage
VDD 2.3 2.7
I/O Supply Voltage
VDDQ 2.3 2.7
I/O Reference Voltage
I/O Termination Voltage(system)
VREF
VTT
1.15
VREF – 0.04
1.35
VREF + 0.04
Input High Voltage
VIH (DC)
VREF + 0.15
VREF + 0.3
Input Low Voltage
VIL (DC)
-0.3 VREF - 0.15
Input Voltage Level, CK and /CK inputs
VIN (DC)
-0.3 VDDQ + 0.3
Input Differential Voltage, CK and /CK inputs
VID (DC)
0.3 VDDQ + 0.6
Input leakage current
I LI -2
2
Output leakage current
I OZ -5
5
Output High current (VOUT = 1.95V)
I OH -16.8
Output Low current (VOUT = 0.35V)
I OL 16.8
Notes :www.DataSheet4U.net
1.Typically, the value of VREF is expected to be about 0.5* VDD of the transmitting device.
VREF is expected to track variation in VDDQ .
2. Peak to peak AC noise on VREF may not exceed 2% VREF (DC).
3. VTT of the transmitting device must track VREF of the receiving device.
UNIT
V
V
V
V
V
V
V
V
uA
uA
mA
mA
UNTE
V
V
V
°C
W
mA
NOTE
1
2
3
CAPACITANCE (VDD = min to max, VDDQ = 2.5V to 2.7V, TA = 25°C, f = 100MHz)
DESCRIPTION
Input capacitance(A0~A11, BA0~BA1, /RAS, /CAS,/WE)
Input capacitance(CKE0,CKE1)
Input capacitance(/CS0)
Input capacitance(CK0~CK2, /CK0~/CK2)
Input capacitance(DM0~DM7)
Data input/output capacitance (DQ0 ~ DQ63, DQS0~DQS7)
SYMBO
L
CIN1
CIN2
CIN3
CIN4
CIN5
COUT1
MIN
36
36
34
34
8
8
MAX
44
44
42
38
9
9
UNITS
pF
pF
pF
pF
pF
pF
URL : www.hbe.co.kr
REV 1.0 (August. 2002)
5 HANBit Electronics Co.,Ltd.
5 Page 
HANBit
HDD16M64B8
ORDERING INFORMATION
Part Number
Density
Org.
HDD16M64B8-10A 128MByte 16M x 64
HDD16M64B8-13A 128MByte 16M x 64
HDD16M64B8-13B 128MByte 16M x 64
Package
Ref.
200PIN
SO-DIMM
200PIN
SO-DIMM
200PIN
SO-DIMM
4K
4K
4K
Vcc
2.5V
2.5V
2.5V
MODE
MAX.frq
DDR
100MHz/CL2
DDR
133MHz/CL2
DDR
133MHz/CL2.5
www.DataSheet4U.net
URL : www.hbe.co.kr
REV 1.0 (August. 2002)
11 HANBit Electronics Co.,Ltd.
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HDD16M64B8.PDF ] | |
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