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DF2S6.2FS fiches techniques PDF

Toshiba Semiconductor - Diodes for Protecting against ESD

Numéro de référence DF2S6.2FS
Description Diodes for Protecting against ESD
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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DF2S6.2FS fiche technique
DF2S6.2FS
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S6.2FS
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
0.6±0.05
A
z 2terminal ultra small package suitable for mounting on small space.
Absolute Maximum Ratings (Ta = 25°C)
0.2
0.07M A ±0.05
0.1±0.05
Characteristic
Symbol
Rating
Unit
Power dissipation
P*
150*
mW
0.48+-00..0032
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high fSC
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEITA
TOSHIBA
1-1L1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 0.0006 g (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm.
Pad Dimension(Reference)Unit : mm
www.DataSheet4U.net
0.26
0.85
0.21
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
Symbol
VZ
ZZ
IR
CT
Test
Circuit
Test Condition
IZ = 5mA
IZ = 5mA
VR =5V
VR = 0V, f=1MHz
Min Typ. Max Unit
5.8 6.2 6.6
V
― ― 30
― ― 2.5 μA
32 pF
1 2007-11-01

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