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PDF PESD5V0X1BQ Data sheet ( Hoja de datos )
| Número de pieza | PESD5V0X1BQ | |
| Descripción | Ultra low capacitance bidirectional ESD protection diodes | |
| Fabricantes | NXP Semiconductors | |
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PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
Rev. 01 — 30 October 2008
Product data sheet
1. Product profile
www.DataSheet4U.net
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
The devices may also be used for unidirectional ESD protection of up to two signal lines.
Table 1. Product overview
Type number
Package
NXP
PESD5V0X1BQ
SOT663
PESD5V0X1BT
SOT23
JEDEC
-
TO-236AB
Package configuration
ultra small and flat lead
very small
1.2 Features
I Bidirectional ESD protection of one line I ESD protection up to 9 kV
I Unidirectional ESD protection of up to I IEC 61000-4-2; level 4 (ESD)
two lines
I Ultra low diode capacitance: Cd = 0.9 pF I AEC-Q101 qualified
I Very low leakage current: IRM = 1 nA
1.3 Applications
I USB interfaces
I Antenna protection
I Radio Frequency (RF) protection
I 10/100/1000 Mbit/s Ethernet
I FireWire
I Asymmetric Digital Subscriber Line
(ADSL)
I High-speed data lines
I Subscriber Identity Module (SIM) card
protection
I Computers, peripherals and printers
I Cellular handsets and accessories
I Portable electronics
I Communication systems
I Audio and video equipment
1 page  
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
1.0
Cd
(pF)
0.96
006aab249
0.92
0.88
0.84
0.80
012345
VR (V)
Fig 2.
bidirectional configuration
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
IPP
2.0
Cd
(pF)
1.9
006aab348
1.8
1.7
1.6
012345
VR (V)
Fig 3.
unidirectional configuration
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
I
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
VRWM VBR VCL
www.DataSheet4U.net
−+
−IPP
006aaa676
Fig 4. V-I characteristics for a bidirectional
ESD protection diode
−VCL −VBR −VRWM
−+
P-N
−IRM
−IR
V
−IPP
006aaa407
Fig 5. V-I characteristics for a unidirectional
ESD protection diode
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
Rev. 01 — 30 October 2008
© NXP B.V. 2008. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
12. Revision history
Table 11. Revision history
Document ID
Release date
PESD5V0X1BQ_PESD5V0X1BT_1 20081030
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
www.DataSheet4U.net
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
Rev. 01 — 30 October 2008
© NXP B.V. 2008. All rights reserved.
11 of 13
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| Páginas | Total 13 Páginas | |
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