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PDF J449 Data sheet ( Hoja de datos )
| Número de pieza | J449 | |
| Descripción | P-Channel MOSFET ( Transistor ) - 2SJ449 | |
| Fabricantes | NEC | |
| Logotipo |  |
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 1. - P-Ch, MOSFET - 2SJ449  Hay una vista previa y un enlace de descarga de J449 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ449
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ449 is P-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on) = 0.8 Ω MAX. (@ VGS = –10 V, ID = –3.0 A)
• Low Ciss Ciss = 1040 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
–250
V
Gate to Source Voltage
VGSS
m 30 V
Drain Current (DC)
ID(DC)
m 6.0
A
Drain Current (pulse)*
ID(pulse)
m 24 A
Total Power Dissipation (Tc = 25 ˚C) PT1
35 W
Total Power Dissipation (TA = 25 ˚C) PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
–6.0 A
Single Avalanche Energy** EAS 180 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = –20 V → 0
0.7 ±0.1
2.54
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 0.65 ±0.1
2.54
1 23
1. Gate
2. Drain
3. Source
MP-45F(ISOLATED TO-220)
Drain
Gate
Body
Diode
www.DataSheet4U.com
Source
Document No. D10030EJ1V0DS00
Date Published May 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
2.0
1.5
1.0 VGS = –10 V
0.5
0 ID = –3 A
–50 0 50 100 150
Tch - Channel Temperature - ˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
Ciss
Coss
100
10
–1.0
Crss
–10 –100
VDS - Drain to Source Voltage - V
–1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
di/dt = 50 A/µs
VGS = 0
100
10
www.DataSheet4U.com
1.0
0.1
1.0 10
ID - Drain Current - A
100
2SJ449
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
VGS = 0 V
10 V
1
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
SWITCHING CHARACTERISTICS
tr
100
10
tf
td(on)
td(off)
1.0
–0.1
–1.0
VDD = –125 V
VGS = –10 V
RG = 10 Ω
–10 –100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-400
–20
ID = –6 A
-300
-200
VDD = –200 V
–125 V
–50 V
–15
–10
-100 –5
0
0 10 20 30 40
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet J449.PDF ] | |
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