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PDF 2SK4178 Data sheet ( Hoja de datos )
| Número de pieza | 2SK4178 | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4178
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
• Low on-state resistance
RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 30 A)
• Low gate to drain charge
QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A)
• 4.5 V drive available
ORDERING INFORMATION
PART NUMBER
2SK4178(1)-S27-AY Note
2SK4178-ZK-E1-AY Note
2SK4178-ZK-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube 75 p/tube
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode).
PACKAGE
TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
30
±20
±48
±144
33
1.0
150
−55 to +150
23
52.9
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH
(TO-251)
(TO-252)
www.DataSheet4U.com
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19080EJ1V0DS00 (1st edition)
Date Published December 2007 NS
Printed in Japan
2007
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
15 VGS = 4.5 V, ID = 12 A
10
10 V, 30 A
5
0
-75
Pulsed
-25 25
75 125
Tch - Channel Temperature - °C
175
SWITCHING CHARACTERISTICS
100
td(off)
tf
td(on)
10
tr
VDD = 15 V
VGS = 10 V
RG = 3 Ω
1
0.1
1
10
ID - Drain Current - A
100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10 V
10 VGS = 4.5 V
0V
1
0.1
www.DataSheet4U0..0c1om
0
0.5
Pulsed
1 1.5
VF(S-D) – Source to Drain Voltage - V
2SK4178
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
1000
Ciss
Coss
100
VGS = 0 V
f = 1 MHz
10
0.1
1
Crss
10 100
VDS - Drain to Source Voltage – V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
25
20
15
10
5
0
0
VDD = 24 V
15 V
10
8
6
VGS 4
VDS
10
2
ID = 30 A
0
20 30
QG – Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
VGS = 0 V
di/dt = 100 A/μs
1
0.1 1
10
IF – Diode Forward Current - A
100
Data Sheet D19080EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK4178.PDF ] | |
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