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PDF 25N06 Data sheet ( Hoja de datos )
| Número de pieza | 25N06 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
25N06
Preliminary
N-CHANNEL ENHANCEMENT
MODE POWER MOS
TRANSISTOR
Power MOSFET
DESCRIPTION
The UTC 25N06 is an N-channel enhancement mode Power
MOSFET, which provides low gate charge, avalanche rugged
technology, and so on.
The UTC 25N06 is universally applied in DC-DC & DC-AC
converters, motor control, high current, high speed switching,
solenoid and relay drivers, regulators, audio amplifiers, automotive
environment.
FEATURES
* Low Gate Charge
* RDS(on) = 0.048 Ω (TYP.)
* Avalanche Rugged Technology
* 100% Avalanche Tested
* Repetitive Avalanche at 100°C
* High Current Capability
* Operating Temperature: 175°C
* Application Oriented Characterization
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
25N06L-TA3-T
25N06G-TA3-T
Note: G: Gate, D: Drain, S: Source
Package
TO-220
Pin Assignment
123
GDS
Packing
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R502-450.a
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25N06
Preliminary
SWITCHING TIME TEST CIRCUIT (Cont.)
12V
47kΩ
100nF
VI=20V=VGMAX
2200µF
IG=CONST
2.7kΩ
1kΩ
PW
47kΩ
100Ω
Power MOSFET
VDD
1kΩ
D.U.T.
VG
Fig. 4 Gate Charge Test Circuit
A
D
MOS
DIODE
G
25Ω S
B
AA
FAST
DIODE
B
B
G
RG
+-
L=100µH
D
D.U.T.
S
85Ω
3.3µF
1000µF
VDD
Fig. 5 Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time
www.DataSheet4U.com
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
VER.a
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 25N06.PDF ] | |
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