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PDF 11N50 Data sheet ( Hoja de datos )
| Número de pieza | 11N50 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
11N50
Preliminary
500V N-CHANNEL MOSFET
Power MOSFET
DESCRIPTION
The UTC 11N50 is an N-channel enhancement mode Power
FET. It uses UTC advanced planar stripe, DMOS technology to
provide customers perfect switching performance, minimal on-state
resistance. It also can withstand high energy pulse in the avalanche
and commutation mode.
The UTC 11N50 is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* Low Gate Charge: 43nC (TYP.)
* 11A, 500V, RDS(ON)=0.55Ω @ VGS=10V
* Fast Switching
* Low CRSS: 25pF (TYP.)
* With 100% Avalanche Tested
* Improved dv/dt Capability
* Fast Recovery Body Diode: 90ns (TYP.)
SYMBOL
D
1
TO-220F1
G
S
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11N50L- TF1-T
11N50G-TF1-T
Package
TO-220F1
Pin Assignment
123
GD S
Packing
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R502-462.a
1 page  
11N50
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Gate Charge Test Circuit
12V
200nF
50kΩ
VGS
300nF
Same Type
as DUT
Gate Charge Waveforms
VGS
QG
10V
VDS
QGS
QGD
3mA
DUT
Charge
Unclamped Inductive Switching Test Circuit
VDS
RG ID
L
10V
tP
www.DataSheet4U.com
DUT
VDD
Unclamped Inductive Switching Waveforms
BVDSS
IAS
EAS=
1
2
LIAS2
BVDSS
BVDSS-VDD
ID(t)
VDD VDS(t)
tP Time
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-462.a
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 11N50.PDF ] | |
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