PDF DE275-201N25A Data sheet ( Hoja de datos )

Número de pieza	DE275-201N25A
Descripción	RF Power MOSFET
Fabricantes	IXYS Corporation
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No Preview Available ! DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω Maximum Ratings 200 V 200 V ±20 V ±30 V 25 A 150 A 25 A 20 mJ 5 V/ns VDSS ID25 RDS(on) PDC = = = = GATE 200 V 25 A 0.13 Ω 590 W DRAIN IS = 0 >200 V/ns PDC PDHS PDAMB RthJC RthJHS Symbol Tc = 25°C Derate 1.9W/°C above 25°C Tc = 25°C Test Conditions 590 W 284 W 3.0 W 0.25 C/W 0.53 C/W Characteristic Values TJ = 25°C unless otherwise specified min. typ. max. VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 3 ma VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C 200 V 2.5 3.0 5.5 V ±100 nA 50 µA 1 mA RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% .13 Ω gfs VDS = 15 V, ID = 0.5ID25, pulse test www.DataSheet4U.com TJ 13 16 18 S -55 +175 °C SG1 SG2 SD1 SD2 Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power cycling capability • IXYS advanced low Qg process • Low gate charge and capacitances − easier to drive − faster switching • Low RDS(on) • Very low insertion inductance (<2nH) • No beryllium oxide (BeO) or other hazardous materials Advantages • Optimized for RF and high speed switching at frequencies to 100MHz • Easy to mount—no insulators needed • High power density TJM 175 °C Tstg -55 +175 °C TL 1.6mm(0.063 in) from case for 10 s 300 °C Weight 2g 1 page DE275-201N25A RF Power MOSFET 201N25A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are mod- eled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. 10 DRAIN 20 GATE Lg Doff Roff D1crs 56 Ron Don 7 Ld 4 D2crs Rd 8 M3 2 Ls Dcos Rds 30 SOURCE Figure 6 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de275-201n25a.html Net List: ********** SYM=POWMOSN .SUBCKT 201N25A 10 20 30 TERMINALS: D G S * 200 Volt 25 Amp .13 ohm N-Channel Power MOSFET M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 1.5 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.5N RD 4 1 .13 DCOS 3 1 D3 RDS 1 3 5.0MEG wwLwS.Da3ta3Sh0ee.1t4NU.com LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=25.0) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=1100P BV=200 M=.5 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=300P BV=200 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0260 Rev 4 © 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixyscolorado.com 5 Page

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