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DE275-102N06A fiches techniques PDF

IXYS Corporation - RF Power MOSFET

Numéro de référence DE275-102N06A
Description RF Power MOSFET
Fabricant IXYS Corporation 
Logo IXYS Corporation 





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DE275-102N06A fiche technique
DE275-102N06A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
VDSS = 1000 V
ID25 =
8A
RDS(on) = 1.5
Symbol Test Conditions
Maximum Ratings
PDC = 590 W
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS IDM, di/dt 100A/µs, VDD VDSS,
Tj 150°C, RG = 0.2
IS = 0
1000
1000
±20
±30
8
48
6
20
5
V
V
V
V
A
A
A
mJ
V/ns
GATE
>200 V/ns
DRAIN
PDC
PDHS
PDAMB
RthJC
RthJHS
Symbol
Tc = 25°C
Derate 2.0W/°C above 25°C
Tc = 25°C
Test Conditions
590 W
300 W
3.0
0.25
0.50
W
C/W
C/W
Characteristic Values
TJ = 25°C unless otherwise specified
VDSS
VGS(th)
IGSS
IDSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
min.
1000
3.5
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t 300µS, duty cycle d 2%
gfs VDS = 20 V, ID = 0.5ID25, pulse test
www.DataSRhteheJHt4SU.com
TJ
TJM
Tstg
TL 1.6mm (0.063 in) from case for 10 s
Weight
2.5
-55
-55
typ. max.
V
5.0 V
±100 nA
50 µA
1 mA
1.5
4.3
0.50
175
300
2
7S
C/W
+175 °C
°C
+175 °C
°C
g
SG1 SG2
SD1 SD2
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
switching at frequencies to 100MHz
Easy to mount—no insulators needed
High power density

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