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PDF K8A1315EBC Data sheet ( Hoja de datos )

Número de pieza K8A1315EBC
Descripción 512Mb C-die NOR FLASH
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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No Preview Available ! K8A1315EBC Hoja de datos, Descripción, Manual

Rev. 1.1, Sep. 2010
K8A12(13)15ET(B/Z)C
512Mb C-die NOR FLASH
(32Mb x16) Synch Burst, Multi Bank SLC
(1.7V ~ 1.95V)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
www.DataSAhlel berta4nUd.cnoammes, trademarks and registered trademarks belong to their respective owners.
2009 Samsung Electronics Co., Ltd. All rights reserved.
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1 page




K8A1315EBC pdf
K8A12(13)15ET(B/Z)C
datasheet
Rev. 1.1
NOR FLASH MEMORY
4.0 BALL FBGA TOP VIEW (BALL DOWN)
TBD
www.DataSheet4U.com
-5-

5 Page





K8A1315EBC arduino
K8A12(13)15ET(B/Z)C
datasheet
Rev. 1.1
NOR FLASH MEMORY
8.0 COMMAND DEFINITIONS
The K8A(10/11/12/13)15E operates by selecting and executing its operational modes. Each operational mode has its own command set. In order to select
a certain mode, a proper command with specific address and data sequences must be written into the command register. Writing incorrect information
which include address and data or writing an improper command will reset the device to the read mode. The defined valid register command sequences
are stated in Table 8.
[Table 8] Command Sequences
Command Definitions
Asynchronous Read
Reset 5),20)
Autoselect
Manufacturer ID 6)
Autoselect
Device ID 6)
Autoselect
Block Protection Verify 7)
Autoselect
Handshaking6), 8)
Program
Unlock Bypass
Unlock Bypass Program9)
Unlock Bypass Block Erase 9)
Unlock Bypass Chip Erase 9)
Unlock Bypass Reset
Chip Erase
Block Erase
Erase Suspend 10)
Erase Resume 11)
Program Suspend 12)
Program Resume 11)
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Block Protection/Unprotection 13)
CFI Query 14)
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Cycle
1
1
4
4
4
4
4
3
2
2
2
2
6
6
1
1
1
1
3
1
1st Cycle 2nd Cycle 3rd Cycle
RA
RD
XXXH
F0H
555H
2AAH (DA)555H
AAH 55H 90H
555H
2AAH (DA)555H
AAH 55H 90H
555H
2AAH (BA)555H
AAH 55H 90H
555H
2AAH (DA)555H
AAH 55H 90H
555H
2AAH
555H
AAH 55H A0H
555H
2AAH
555H
AAH 55H 20H
XXX
PA
A0H PD
XXX
BA
80H 30H
XXXH
XXXH
80H 10H
XXXH
XXXH
90H 00H
555H
2AAH
555H
AAH 55H 80H
555H
2AAH
555H
AAH 55H 80H
(DA)XXXH
B0H
(DA)XXXH
30H
(DA)XXXH
B0H
(DA)XXXH
30H
XXX
XXX
ABP
60H 60H 60H
(DA)X55H
98H
4th Cycle
(DA)X00H
ECH
(DA)X01H
Note6
(BA)X02H
00H/01H
(DA)X03H
0H/1H
PA
PD
555H
AAH
555H
AAH
5th Cycle 6th Cycle
2AAH
55H
2AAH
55H
555H
10H
BA
30H
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