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PDF IRG7PH42UD1PbF Data sheet ( Hoja de datos )
| Número de pieza | IRG7PH42UD1PbF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97480
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Square RBSOA
• Ultra-low VF Diode
• 1300Vpk repetitive transient capacity
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Tight parameter distribution
• Lead free package
C
G
E
n-channel
IRG7PH42UD1PbF
IRG7PH42UD1-EP
VCES = 1200V
I NOMINAL = 30A
TJ(max) = 150°C
VCE(on) typ. = 1.7V
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), low switching losses
and Ultra-low VF
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
Continuous Collector Current
INOMINAL
ICM
ILM
Nominal Current
hPulse Collector Current, VGE=15V
cClamped Inductive Load Current, VGE=20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IFRM
Diode Continous Forward Current
dDiode Repetitive Peak Forward Current
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
www.DataSheet4U.comSoldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
CC
GC E
TO-247AC
IRG7PH42UD1PbF
GC E
TO-247AD
IRG7PH42UD1-EP
G
Gate
C
Collector
E
Emitter
Max.
1200
85g
45
30
90
120
70
35
120
±30
313
125
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.4
1.05
–––
–––
Units
°C/W
www.irf.com
3/26/10
1 page  
IRG7PH42UD1PbF/IRG7PH42UD1-EP
5000
1000
4000
3000
EOFF
tdOFF
2000
1000
0
0 10 20 30 40 50 60 70
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V
6500
tF
100
0
10 20 30 40 50 60 70
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V
10000
5500
4500
3500
2500
EOFF
1000
100
tdOFF
tF
1500
0
25 50 75 100 125
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V
10000
Cies
1000
100
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Coes
Cres
10
0
20 40 60 80
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
100
10
0
20 40 60 80 100 120
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V
16
14 VCES =600V
12 VCES= 400V
10
8
6
4
2
0
0 50 100 150 200
Q G, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 30A; L = 680μH
www.irf.com
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