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PDF K6R4004V1D Data sheet ( Hoja de datos )
| Número de pieza | K6R4004V1D | |
| Descripción | 1Mx4 Bit High Speed Static RAM | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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K6R4004V1D
Document Title
1Mx4 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
PRELIMINARY
CMOS SRAM
RevNo.
Rev. 0.0
Rev. 0.1
Rev. 1.0
Rev. 0.3
History
Initial release with Preliminary.
Add Low Ver.
Change Icc, Isb and Isb1
Item
8ns
ICC(Commercial)
10ns
12ns
15ns
8ns
ICC(Industrial)
10ns
12ns
15ns
ISB
ISB1(L-ver.)
Previous
110mA
90mA
80mA
70mA
130mA
115mA
100mA
85mA
30mA
0.5mA
1. Correct AC parameters : Read & Write Cycle mA
2. Delete Low Ver.
3. Delete Data Retention Characteristics
Current
80mA
65mA
55mA
45mA
100mA
85mA
75mA
65mA
20mA
1.2mA
Draft Data
Remark
Aug. 20. 2001 Preliminary
Sep. 19. 2001 Preliminary
Nov. 3. 2001 Preliminary
Nov.23. 2001 Preliminary
Rev. 1.0
Rev. 2.0
1. Delete 12ns,15ns speed bin.
2. Change Icc for Industrial mode.
Item
ICC(Industrial)
8ns
10ns
Previous
100mA
85mA
1. Add the Lead Free Package type.
Current
90mA
75mA
Dec.18. 2001 Final
July. 26, 2004 Final
www.DataSheet4U.com
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.0
July 2004
1 page  
K6R4004V1D
PRELIMINARY
CMOS SRAM
AC CHARACTERISTICS(TA=0 to 70°C, VCC=3.3±0.3V, unless otherwise noted.)
TEST CONDITIONS*
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
* The above test conditions are also applied at industrial temperature range.
Output Loads(A)
DOUT
ZO = 50Ω
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
RL = 50Ω
VL = 1.5V
30pF*
DOUT
353Ω
+3.3V
319Ω
5pF*
* Capacitive Load consists of all components of the
test environment.
* Including Scope and Jig Capacitance
READ CYCLE*
Parameter
Symbol
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tPU
tPD
K6R4004V1D-08
Min Max
8-
-8
-8
-4
3-
0-
04
04
3-
0-
-8
* The above parameters are also guaranteed at industrial temperature range.
K6R4004V1D-10
Min Max
10 -
- 10
- 10
-5
3-
0-
05
05
3-
0-
- 10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
www.DataSheet4U.com
-5-
Rev 2.0
July 2004
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet K6R4004V1D.PDF ] | |
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