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PDF K6R4004C1D Data sheet ( Hoja de datos )
| Número de pieza | K6R4004C1D | |
| Descripción | 1Mx4 Bit High Speed Static RAM | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
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K6R4004C1D
Document Title
1Mx4 Bit High Speed Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
PRELIMINARY
CMOS SRAM
RevNo.
Rev. 0.0
Rev. 0.1
History
Initial release with Preliminary.
Change Icc. Isb and Isb1
Item
ICC(Commercial)
ICC(Industrial)
ISB
ISB1
10ns
12ns
15ns
10ns
12ns
15ns
Previous
90mA
80mA
70mA
115mA
100mA
85mA
30mA
10mA
Current
65mA
55mA
45mA
85mA
75mA
65mA
20mA
5mA
Draft Data
September. 7. 2001
November, 3. 2001
Remark
Preliminary
Preliminary
Rev. 0.2
Rev. 0.3
Rev. 1.0
Rev. 2.0
1. Correct AC parameters : Read & Write Cycle mA
2. Delete Low Ver.
3. Delete Data Retention Characteristics
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
ICC(Industrial)
10ns
12ns
Previous
85mA
75mA
Current
75mA
65mA
1. Final datasheet release.
2. Delete 12ns speed bin.
3. Delete UB,LB releated AC characteristics and timing diagram.
4. Correct Read Cycle time waveform(2).
1. Add the Lead Free Package type.
November, 3. 2001 Preliminary
December, 18. 2001 Preliminary
July, 09, 2002
July. 26, 2004
Final
Final
www.DataSheet4U.com
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev. 2.0
July 2004
1 page  
K6R4004C1D
PRELIMINARY
CMOS SRAM
AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)
TEST CONDITIONS*
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
* The above test conditions are also applied at industrial temperature range.
Output Loads(A)
DOUT
ZO = 50Ω
Output Loads(B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
RL = 50Ω
VL = 1.5V
30pF*
DOUT
255Ω
+5.0V
480Ω
5pF*
* Capacitive Load consists of all components of the
test environment.
* Including Scope and Jig Capacitance
READ CYCLE*
Parameter
Symbol
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tPU
tPD
Min
10
-
-
-
3
0
0
0
3
0
-
* The above parameters are also guaranteed at industrial temperature range.
K6R4004C1D-10
Max
-
10
10
5
-
-
5
5
-
-
10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
www.DataSheet4U.com
-5-
Rev. 2.0
July 2004
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet K6R4004C1D.PDF ] | |
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