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WINSEMI SEMICONDUCTOR - High Voltage Fast-Switching NPN Power Transistor

Numéro de référence SBP13007S
Description High Voltage Fast-Switching NPN Power Transistor
Fabricant WINSEMI SEMICONDUCTOR 
Logo WINSEMI SEMICONDUCTOR 





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SBP13007S fiche technique
SBP13007S
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
VEBO
IC
ICP
IB
IBM
PC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25
Total Dissipation at Ta = 25
TJ Operation Junction Temperature
TSTG
Storage Temperature
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Test Conditions
VBE = 0
IB = 0
IC = 0
tP = 5ms
Value
700
400
9.0
8.0
16
4.0
8.0
80
2.1
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
Thermal Characteristics
Symbol
Parameter
www.DataSheet4UR.cθoJcm Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
Value
1.56
62.5
Units
/W
/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
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