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SBP13007-H2 fiches techniques PDF

SemiWell Semiconductor - High Voltage Fast-Switching NPN Power Transistor

Numéro de référence SBP13007-H2
Description High Voltage Fast-Switching NPN Power Transistor
Fabricant SemiWell Semiconductor 
Logo SemiWell Semiconductor 





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SBP13007-H2 fiche technique
SemiWell Semiconductor
SBP13007-H2
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical [email protected])
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical [email protected]/1.0A)
- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as switching mode power supply.
Symbol
1.Base
2.Collector
3.Emitter
TO-220
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PC
TSTG
TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 )
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
Collector Peak Current ( tP 5 ms )
Base Current
Base Peak Current ( tP 5 ms )
Total Dissipation at TC = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
RθJC
www.DataSheet4RUθJ.Acom
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
123
Value
700
400
9.0
8.0
16
4.0
8.0
80
- 65 ~ 150
150
Value
1.56
62.5
Oct, 2002. Rev. 2
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
Units
V
V
V
A
A
A
A
W
°C
°C
Units
°C/W
°C/W
1/6

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