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PDF NBLVEP16VR Data sheet ( Hoja de datos )
| Número de pieza | NBLVEP16VR | |
| Descripción | 2.5V/3.3V/5V ECL Differential Receiver/Driver | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NBLVEP16VR
2.5V/3.3V/5V ECL
Differential Receiver/Driver
with Oscillator Gain Stage
and Enabled High Gain
Outputs
http://onsemi.com
The NBLVEP16VR is an ECL/LVPECL oscillator gain stage with
MARKING DIAGRAM
high−gain output buffers, selectable output enable and a feedback
buffer. The NBLVEP16VR is a solution for crystal oscillators and
SAW−based voltage−controlled oscillators.
• Q and Q Outputs have Selectable 4 mA or 8 mA, Self Bias Current
Sources
• QHG and QHG have a Selectable 10 mA, Self Bias Current Sources
• Synchronous Output Enable of the High−Gain Outputs with
Bottom View
QFN−16
MN SUFFIX
CASE 485G
XXXX
XXXX
ALYW
XXXX = Device Code
A = Assembly Location
Selectable Disabled State
• Selectable LVCMOS/LVTTL or LVPECL Level Input of the Output
Enable Pin
• Maximum Frequency > 2.5 GHz Typical
• (LV)PECL Mode Operating Range: VCC = 2.375 V to 5.5 V with
VEE = 0 V
• NECL Mode Operating Range: VCC = 0 V with
VEE = −2.375 V to −5.5 V
• Temperature Compensated Inputs and Outputs
• Excellent Clock Input Sensitivity
• VBB Output Supports Current Source/Sink Capability up to a
Robust 1.5 mA
L = Wafer Lot
Y = Year
W = Work Week
ORDERING INFORMATION
Device
Package Shipping†
NBLVEP16VRMN
QFN−16 123 / Rail
NBLVEP16VRMNR2
QFN−16 3000/ Tape &
Reel
NBWLVEP16VR
Wafer
1. Contact Sales Representative.
Refer to
Note 1.
4 mA ea.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
4 mA ea. (opt.) Brochure, BRD8011/D.
CS_SEL
Q VEE
Q
D
D
470 W
VBB
VBB_ADJ
OD_MODE
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EN
470 W
VBB
1Q
Q
0
LEN Q
LATCH
D
QHG
QHG
10 mA ea. (opt.)
VEEP
LVCMOS/LVTTL
Threshold
Figure 1. Logic Diagram
EN_SEL
© Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 2
1
Publication Order Number:
NBLVEP16VR/D
1 page  
NBLVEP16VR
ATTRIBUTES
ESD Protection
Characteristics
Human Body Model
Machine Model
Charged Device Model
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
Flammability Rating
Oxygen Index: 28 to 34
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Value
> 2 kV
> 150 V
> 1 kV
Level 1
UL 94 V−0 @ 0.125 in
MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Rating
Unit
VCC LVPECL Mode Power Supply
VEE NECL Mode Power Supply
VI LVPECL Mode Input Voltage
NECL Mode Input Voltage
IBB VBB Current Sink/Source
IIN Input Current (VIN − VBB) B 470 W
Iout Output Current
VEE = 0 V
VCC = 0 V
VEE = 0 V
VCC = 0 V
D, D
Continuous
Surge
6
−6
6
−6
$1.5
$5
50
100
V
V
V
V
mA
mA
mA
mA
TA Operating Temperature Range
Tstg Storage Temperature Range
qJA Thermal Resistance (Junction−to−Ambient)
0 LFPM
500 LFPM
−40 to +85
−65 to +150
°C
°C
°C/W
°C/W
qJC Thermal Resistance (Junction−to−Case)
Standard Board
°C/W
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute maximum−rated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
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http://onsemi.com
5
5 Page 
Driver
QHG
QHG
NBLVEP16VR
Zo = 50 W
Zo = 50 W
50 W
Oscilliscope
50 W
VEEP (OPEN)
Figure 11. QHG/QHG Device Evaluation Set−up; VEEP = OPEN
Driver
QHG
QHG
Zo = 50 W
Zo = 50 W
50 W
Oscilliscope
50 W
VEEP
VEE
Figure 12. QHG/QHG Device Evaluation Set−up; VEEP = VEE
Driver
Q
Q
Zo = 50 W
Zo = 50 W
50 W
Oscilliscope
50 W
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VEE
VEE
CS_SEL (Open or Tied to VEE)
VEE
Figure 13. Q/Q Device Evaluation Set−up; CS_SEL = VEE or OPEN
http://onsemi.com
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet NBLVEP16VR.PDF ] | |
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