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Infineon Technologies - Low VF Schottky Diode

Numéro de référence BAS3010S
Description Low VF Schottky Diode
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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BAS3010S fiche technique
Low VF Schottky Diode
Forward current: 1 A
Reverse voltage: 30 V
Low forward voltage and smallest package
form factor (1.0 x 0.6 x < 0.4 mm) for
mobile phone battery charger application
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BAS3010S...
BAS3010S-03LRH
2
3
1
Type
BAS3010S-03LRH*
* Preliminary data
Package
TSLP-3-7
Configuration
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage2)
Forward current2)3)
Repetitive peak forward current3)
(tp 1 ms, D 0.25)
Non-repetitive peak surge forward current3)
(t 10 ms)
VR
IF
IFRM
IFSM
Junction temperature
Tj
Operating temperature range
Top
www.DSattoaSrahegeet4Ute.cmomperature
Tstg
1Pb-containing package may be available upon special request
2For TA > 25°C the derating of VR and IF has to be considered.
3Only valid if pin 1 and 2 are connected in parallel
Marking
1S
Value
30
1
3.5
5
150
-55 ... 125
-65 ... 150
Unit
V
A
°C
1 2007-08-16

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