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PDF TBB1012 Data sheet ( Hoja de datos )
| Número de pieza | TBB1012 | |
| Descripción | Twin Built in Biasing Circuit MOS FET IC | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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TBB1012
Twin Built in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
REJ03G1245-0200
Rev.2.00
Aug 22, 2006
Features
• Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
• Very useful for total tuner cost reduction.
• Suitable for World Standard Tuner RF amplifier.
• High gain
• Low noise
• Low output capacitance
• Power supply voltage: 5 V
Outline
Notes:
RENESAS Package code: PTSP0006JA-A
(Package name: CMPAK-6)
4
5
6
3
2
1
1. Drain(1)
2. Source
3. Drain(2)
4. Gate-1(2)
5. Gate-2
6. Gate-1(1)
1. Marking is “MM“.
2. TBB1012 is individual type number of Renesas TWIN BBFET.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
VG2S
Drain current
Channel power dissipation
ID
PchNote3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 3. Value on the glass epoxy board (50mm × 40mm × 1mm).
Ratings
6
+6
–0
+6
–0
30
250
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
www.DataSheet4U.com
Rev.2.00 Aug 22, 2006 page 1 of 13
1 page  
TBB1012
200 MHz Power Gain, Noise Figure Test Circuit
VT
1000 p
VG2
1000 p
VT
1000 p
Input (50 Ω)
1000 p
47 k
L1
36 p
1000 p
47 k
FET2
1000 p
1SV70
R1
1000 p
V G1
47 k
L2 1000 p
Output (50 Ω)
10 p max
RFC
1SV70
1000 p
VD
Unit : Resistance (Ω)
Capacitance (F)
R1 : 82 kΩ
L1 : φ1 mm Enameled Copper Wire, Inside dia 10 mm, 2 Turns
L2 : φ1 mm Enameled Copper Wire, Inside dia 10 mm, 2 Turns
RFC : φ1 mm Enameled Copper Wire, Inside dia 5 mm, 2 Turns
www.DataSheet4U.com
Rev.2.00 Aug 22, 2006 page 5 of 13
5 Page 
TBB1012
• FET2
S11 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0 .2 .4 .6 .8 1 1.5 2 3 4 5
–.2
–.4
–.6
–.8 –1
–10
–5
–4
–3
–2
–1.5
Test condition: VDS = 5 V, VG1 = 5 V,
VG2S = 4 V, RG = 82 kΩ
0.05 to 1.05 GHz (0.05 GHz step)
S21 Parameter vs. Frequency
90° Scale: 5 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test condition: VDS = 5 V, VG1 = 5 V,
VG2S = 4 V, RG = 82 kΩ
0.05 to 1.05 GHz (0.05 GHz step)
S12 Parameter vs. Frequency
90° Scale: 0.05 / div.
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test condition: VDS = 5 V, VG1 = 5 V,
VG2S = 4 V, RG = 82 kΩ
0.05 to 1.05 GHz (0.05 GHz step)
S22 Parameter vs. Frequency
.8 1
.6
.4
.2
1.5
2
3
4
5
10
0 .2 .4 .6 .8 1 1.5 2 3 4 5
–.2
–.4
–.6
–.8 –1
–10
–5
–4
–3
–2
–1.5
Test condition: VDS = 5 V, VG1 = 5 V,
VG2S = 4 V, RG = 82 kΩ
0.05 to 1.05 GHz (0.05 GHz step)
www.DataSheet4U.com
Rev.2.00 Aug 22, 2006 page 11 of 13
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet TBB1012.PDF ] | |
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