|
|
PDF IPW60R045CP Data sheet ( Hoja de datos )
| Número de pieza | IPW60R045CP | |
| Descripción | CoolMOS Power Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IPW60R045CP (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
CoolMOS® Power Transistor
Features
• Worldwide best R ds,on in TO247
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Product Summary
V DS @ Tjmax
R DS(on),max
Q g,typ
IPW60R045CP
650 V
0.045 Ω
150 nC
PG-TO247-3-1
Type
IPW60R045CP
Package
PG-TO247-3-1
Ordering Code Marking
SP000067149 6R045
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
www.DataSheGeta4tUe.csoomurce voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M3 and M3.5 screws
Value
60
38
230
1950
3
11
50
±20
±30
431
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev. 2.2
page 1
2008-01-21
Please note the new package dimensions arccording to PCN 2009-134-A
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
140
120
20 V
100
80
60
10 V
8V
7V
6V
5.5 V
5V
IPW60R045CP
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
0.16
0.12
5 V 5.5 V
6V
6.5 V
7V
0.08
20 V
40
4.5 V
0.04
20
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=44 A; V GS=10 V
0.12
0.1
0.08
0
20 0 20 40 60
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
320
280
240
200
80 100
C °25
0.06
0.04
www.DataSheet4U.com
0.02
98 %
typ
160
120
80
40
C °150
0
-60 -20 20
60 100 140 180
T j [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 2.2
page 5
2008-01-21
Please note the new package dimensions arccording to PCN 2009-134-A
5 Page 
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
1 New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
www.DataSheet4U.com
Figure 1 Outlines TO-247, dimensions in mm/inches
Final Data Sheet Erratum
Rev. 2.0, 2010-02-01
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IPW60R045CP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IPW60R045CP | CoolMOS Power Transistor | Infineon Technologies AG |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |