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PDF IPA100N08N3G Data sheet ( Hoja de datos )
| Número de pieza | IPA100N08N3G | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOS(TM)3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
Type
IPA100N08N3 G
IPA100N08N3 G
Product Summary
V DS
R DS(on),max
ID
80 V
10 mΩ
40 A
Package
Marking
PG-TO220-FP
100N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I D T C=25 °C2)
40
T C=100 °C
30
Pulsed drain current3)
I D,pulse T C=25 °C
160
Avalanche energy, single pulse4) E AS I D=40 A, R GS=25 Ω
110
Gate source voltage
V GS
±20
Power dissipation
P tot T C=25 °C
35
Operating and storage temperature T j, T stg
-55 ... 175
IEC climatic category; DIN IEC 68-1
www.DataSheet4U.com
55/175/56
1)J-STD20 and JESD22
2) Current is limited by package; with an RthJC=1.5 K/W in a standard TO-220 package the chip is able
to carry 72A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.0
page 1
Unit
A
mJ
V
W
°C
2008-11-21
1 page  
IPA100N08N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
160
10 V 8 V 7 V
120
80
40
0
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
160
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
6.5 V
20
5V
5.5 V
6V
16
6.5 V
6V
5.5 V
12
8
7V
8V
10 V
5V 4
4.5 V
45
0
0 40 80 120
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
120
120
80
www.DataSheet4U.c4o0m
0
0
Rev. 2.0
175 °C
25 °C
246
V GS [V]
80
40
0
80
page 5
40 80 120
I D [A]
160
2008-11-21
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPA100N08N3G.PDF ] | |
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