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PDF HMMC-5617 Data sheet ( Hoja de datos )
| Número de pieza | HMMC-5617 | |
| Descripción | 6-18 GHz Medium Power Amplifier | |
| Fabricantes | Agilent(Hewlett-Packard) | |
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Agilent HMMC-5617
6–18 GHz Medium Power Amplifier
1GG6-8002
Data Sheet
Features
• High efficiency:
11% @ P–1 dB typical
• Output power, P–1 dB:
18 dBm typical
• High gain: 14 dB typical
• Flat gain response: ±0.5 dB typical
• Low input/output VSWR:
< 1.7:1 typical
• Single supply bias: 5 volts (@ 115
mA typical) with optional gate bias
Chip size:
920 x 920 µm (36.2 x 36.2 mils)
Chip size tolerance: ±10 µm (±0.4 mils)
Chip thickness: 127 ± 15 µm (5.0 ± 0.6 mils)
Pad dimensions: 80 x 80 µm (3.2 x 3.2 mils)
Description
Absolute maximum ratings1
The HMMC-5617 6 to 18 GHz MMIC is
an efficient two-stage medium-power
amplifier that is designed to be used as
a cascadable intermediate gain block
for EW applications. In communication
systems, it can be used as an amplifier
for a local oscillator or as a transmit
amplifier. It is fabricated using a
PHEMT integrated circuit structure
that provides exceptional efficiency
and flat gain performance. During
typical operation, with a single 5-volt
DC power supply, each gain stage
is biased for Class-A operation for
optimal power output with minimal
www.DadhtiasastSomhretaieottcn4h.UiTn.hcgoecmRirFcuinitpryutfoarnudsReFinou5t0pΩut
environments.
The backside of the chip is both RF
and DC ground. This helps simplify
the assembly process and reduces
assembly related performance
variations and costs.
Symbol
Parameters/conditions
Minimum
Maximum
VD1, VD2
Drain supply voltage
5.5
VG1
Optional gate supply voltage
–5
+1
VG2
Optional gate supply voltage
–10
+1
ID1 Drain supply current
70
ID2 Drain supply current
Pin RF input power2
Tch Channel temperature3
84
20
160
TA Backside ambient temperature –55 +100
Tst Storage temperature
–65 +150
Tmax Maximum assembly temperature
300
1 Absolute maximum ratings for continuous operation unless otherwise noted.
2 Operating at this power level for extended (continuous) periods is not recommended.
3 Refer to DC specifications/physical properties table for derating information.
Units
Volts
Volts
Volts
mA
mA
dBm
°C
°C
°C
°C
1 page  
800 pF
Short bond wires
*
RF input
To VDD power supply
Chip capacitor (100 pF)
Locate near MMIC
Gold plated shim (optional)
800 pF
*
RF out
*
RF input
To VDD power supply
Chip capacitor (100 pF)
Locate near MMIC
Gold plated shim (optional)
*
RF out
* 0.2 nH bond wire inductance (10 mils)
Figure 10. Assembly for single drain-bias operation
0
920
145 VD1 355
573 VD2
Bonding island or
small chip-capacitor
To VG1 power supply
* 0.2 nH bond wire inductance (10 mils)
Bonding island or
small chip-capacitor
To VG2 power supply
Figure 11. Assembly with gate bias connections
IN OUT
530
0
0 79
VG1
Figure 12. Bonding pad positions
593 VG2
Note: All dimensions
in micrometers.
920
www.DatTahSihsedeat4taUs.choemet contains a variety of
typical and guaranteed performance
data. The information supplied should
not be interpreted as a complete list
of circuit specifications. Customers
considering the use of this, or other
Agilent TCA GaAs ICs, for their design
should obtain the current production
specifications from Agilent TCA
Marketing. In this data sheet the term
typical refers to the 50th percentile
performance. For additional information
contact Agilent TSO Marketing at
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMMC-5617.PDF ] | |
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