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NXP Semiconductors - Ultra low profile bidirectional low capacitance ESD protection diode

Numéro de référence PESD5V0S1BSF
Description Ultra low profile bidirectional low capacitance ESD protection diode
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PESD5V0S1BSF fiche technique
PESD5V0S1BSF
Ultra low profile bidirectional low capacitance
ESD protection diode
Rev. 2 — 18 February 2011
Product data sheet
1. Product profile
1.1 General description
Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to
protect one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant)
Bidirectional ESD protection of one line
Low diode capacitance Cd = 35 pF
ESD protection up to 30 kV according IEC 61000-4-2
Ultra small SMD package
Symmetrical breakdown voltage
1.3 Applications
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VRWM
reverse standoff voltage
5 -
5V
Cd diode capacitance
f = 1 MHz; VR = 0 V [1] 25 35 45 pF
[1] This parameter is guaranteed by design.
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