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DIODES - 20V SOT23-6 complementary medium power transistors

Numéro de référence ZXTC2062E6
Description 20V SOT23-6 complementary medium power transistors
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ZXTC2062E6 fiche technique
ZXTC2062E6
20V, SOT23-6, complementary medium power transistors
Summary
BVCEO > 20 (-20)V
BVECO > 5 (-4)V
IC(cont) = 4 (-3.5)A
VCE(sat) < 50 (-65)mV @ 1A
RCE(sat) = 35 (54)m
PD = 1.1W
Description
Advanced process capability has been used to
achieve this high performance device.
Combining NPN and PNP transistors in the
SOT23-6 package provides a compact solution
for the intended applications
Features
• NPN-PNP combination
• Very low saturation voltage
• High gain
• SOT23-6 package
Applications
• MOSFET and IGBT gate driving
• Motor drive
Ordering information
DEVICE
ZXTC2062E6TA
Reel size
(inches)
7
Tape width
(mm)
8
Device marking
2062
www.DataSheet4U.com
B1
Quantity
per reel
3000
C1 C2
B2
E1 E2
C1 E1
B1 B2
C2 E2
Top view
Issue 1 - October 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com

PagesPages 8
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