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Numéro de référence | CEU02N7G | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | Chino-Excel Technology | ||
Logo | |||
CED02N7G/CEU02N7G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
700V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
VDS
VGS
ID
IDM
PD
EAS
IAS
700
±30
1.6
1.1
6.4
48
0.38
11.25
1.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
wwTwh.eDrmataalSRheeseits4taUn.cceo,mJunction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.6
50
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 4. 2011.Jan
http://www.cetsemi.com
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Pages | Pages 4 | ||
Télécharger | [ CEU02N7G ] |
No | Description détaillée | Fabricant |
CEU02N7 | N-Channel Enhancement Mode Field Effect Transistor | CET |
CEU02N7G | N-Channel Enhancement Mode Field Effect Transistor | Chino-Excel Technology |
CEU02N7G-1 | N-Channel Enhancement Mode Field Effect Transistor | CET |
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