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Chino-Excel Technology - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CES2342
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant Chino-Excel Technology 
Logo Chino-Excel Technology 





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CES2342 fiche technique
CES2342
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
40V, 4.2A, RDS(ON) = 45m@VGS = 10V.
RDS(ON) = 58m@VGS = 4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
D
DS
G
SOT-23
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 40
VGS ±20
ID 4.2
IDM 15
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
100
www.DataSheet4U.com
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2006.Sep
http://www.cetsemi.com

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