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KYW35K3 fiches techniques PDF

Diotec Semiconductor - Silicon Press-Fit-Diodes

Numéro de référence KYW35K3
Description Silicon Press-Fit-Diodes
Fabricant Diotec Semiconductor 
Logo Diotec Semiconductor 





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KYW35K3 fiche technique
Silicon Press-Fit-Diodes
KYW 35A05 ... KYW 35A6
KYW 35K05 ... KYW 35K6
Silizium-Einpreßdioden
Dimensions / Maße in mm
Nominal current – Nennstrom
35 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50…600 V
Metal press-fit case with glass seal
Metall-Einpreßgehäuse mit Glasdurchführung
Weight approx.
Gewicht ca.
10 g
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Type / Typ
Wire to / Draht an
Anode
Cathode
Repetitive peak reverse voltage
Periodische Spitzensperrspanng.
VRRM [V]
KYW 35A05 KYW 35K05
50
KYW 35A1
KYW 35K1
100
KYW 35A2
KYW 35K2
200
KYW 35A3
KYW 35K3
300
KYW 35A4
KYW 35K4
400
KYW 35A6
KYW 35K6
600
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
60
120
240
360
480
700
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100/C
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
Peak forward surge current, 50 / 60 Hz half sine-wave
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle
TA = 25/C
Rating for fusing, t <10 ms
Grenzlastintegral, t <10 ms
TA = 25/C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Maximum pressure – Maximaler Einpreßdruck
IFAV 35 A
IFRM 110 A 1)
IFSM 360 / 400 A
i2t 660 A2s
Tj – 50...+175 /C
TS – 50...+175 /C
7 kN
1) Max. case temperature TC = 150/C – Max. Gehäusetemperatur TC = 150
84
28.02.2002

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