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PDF TIC226C Data sheet ( Hoja de datos )
| Número de pieza | TIC226C | |
| Descripción | SILICON BIDIRECTIONAL TRIODE THYRISTOR | |
| Fabricantes | Comset Semiconductor | |
| Logotipo |  |
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SEMICONDUCTORS
TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M,
TIC226N, TIC226S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
• 8 A RMS
• 70 A Peak
• Glass Passivated Wafer
• 100 V to 800 V Off-State Voltage
• Max IGT of 50 mA (Quadrants 1-3)
• High-temperature, High-current and high-voltage applications
• Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
ABCDEMSN
VDRM
Repetitive peak off-state voltage
(see Note1)
100 200 300 400 500 600 700 800
IT(RMS)
Full-cycle RMS on-state current at (or
below) 70°C case temperature (see note2)
8
ITSM
Peak on-state surge current full-sine-wave
(see Note3)
70
ITSM
Peak on-state surge current half-sine-wave
(see Note4)
8
IGM Peak gate current
Peak gate power dissipation at (or below)
±1
PGM 85°C case temperature (pulse width ≤200
µs)
2.2
PG(AV)
Average gate power dissipation at (or
below) 85°C case (see Note5)
0.9
www.DTaCtaSheet4U.coOmperating case temperature range
Tstg Storage temperature range
TL
Lead temperature 1.6 mm from case for 10
seconds
-40 to +110
-40 to +125
230
V
A
A
A
A
W
W
°C
°C
°C
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TIC226C.PDF ] | |
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