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WINSEMI SEMICONDUCTOR - High voltage Fast Switching NPN Power Transistor

Numéro de référence SBW13009-S
Description High voltage Fast Switching NPN Power Transistor
Fabricant WINSEMI SEMICONDUCTOR 
Logo WINSEMI SEMICONDUCTOR 





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SBW13009-S fiche technique
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SBW13009-S
High Voltage Fast-Switching NPN Power Transistor
Features
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage,High speed
switching characteristics required such as lighting
system,switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCEO
Collector -emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
ICP Collector pulse Current
IB Base Current
IBM Base Peak Current
PC Total Dissipation at Tc=25
TJ Operation Junction Temperature
TSTG
Storage Temperature
Test Conditions
VBE =0
IB=0
IC=0
tP=5ms
Value
700
400
9.0
12
25
6.0
12
120
-40~150
-40~150
Units
V
V
V
A
A
A
A
W
Thermal Characteristics
Symbol
Parameter
RӨJC
Thermal Resistance Junction to Case
RӨJA
Thermal Resistance Junction to Ambient
Value
1.04
62.5
Units
℃/W
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.

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