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PDF HY5S7B6LFP-S Data sheet ( Hoja de datos )
| Número de pieza | HY5S7B6LFP-S | |
| Descripción | 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O | |
| Fabricantes | Hynix Semiconductor | |
| Logotipo |  |
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512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
Document Title
4Bank x 8M x 16bits Synchronous DRAM
Revision History
Revision No.
0.1
0.2
0.3
0.4
1.0
History
Initial Draft
Package size (10 x 13 [mm2])
Defined DC Chatacteristics (Page 10 ~ 11)
Modified Address # in Ball Description and Figures
Final Version
Draft Date
Oct. 2004
May. 2005
Aug. 2006
Aug. 2006
Jan. 2007
Remark
Preliminary
Preliminary
Preliminary
Preliminary
www.DataSheet4U.com
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Jan. 2007
1
1 page  
11
512Mbit (32Mx16bit) Mobile SDR Memory
HY5S7B6LF(P) Series
BALL DESCRIPTION
98
7
A
B
C
D
E
F
G
H
J
3 21
54 Ball
FBGA
0.8mm
Ball Pitch
1
VSS
DQ14
DQ12
DQ10
DQ8
UDQM
A12
A8
www.DataSheet4U.com
VSS
Rev 1.0 / Jan. 2007
2
DQ15
DQ13
DQ11
DQ9
NC
CLK
A11
A7
A5
<Bottom View>
37
VSSQ A VDDQ
VDDQ B VSSQ
VSSQ C VDDQ
VDDQ D VSSQ
VSS E VDD
CKE F /CAS
A9 G BA0
A6 H A0
A4 J A3
< Top View >
8
DQ0
DQ2
DQ4
DQ6
LDQM
/RAS
BA1
A1
A2
9
VDD
DQ1
DQ3
DQ5
DQ7
/WE
/CS
A10
VDD
5
5 Page 
11
512Mbit (32Mx16bit) Mobile SDR Memory
HY5S7B6LF(P) Series
AC CHARACTERISTICS I (AC operating conditions unless otherwise noted)
Parameter
System Clock
Cycle Time
CAS Latency=3
CAS Latency=2
Clock High Pulse Width
Clock Low Pulse Width
Access Time From Clock
CAS Latency=3
CAS Latency=2
Data-out Hold Time
Data-Input Setup Time
Data-Input Hold Time
Address Setup Time
Address Hold Time
CKE Setup Time
CKE Hold Time
Command Setup Time
Command Hold Time
CLK to Data Output in Low-Z Time
CLK to Data Output in
High-Z Time
CAS Latency=3
CAS Latency=2
Symbol
tCK3
tCK2
tCHW
tCLW
tAC3
tAC2
tOH
tDS
tDH
tAS
tAH
tCKS
tCKH
tCS
tCH
tOLZ
tOHZ3
tOHZ2
H
Min Max
7.5 1000
12 1000
2.5 -
2.5 -
- 6.5
- 9.0
2.0 -
2.0 -
1.0 -
2.0 -
1.0 -
2.0 -
1.0 -
2.0 -
1.0 -
1.0 -
6.5
9.0
S
Min Max
9.5 1000
15 1000
3.0 -
3.0 -
- 7.0
- 10
2.0 -
3.0 -
1.5 -
3.0 -
1.5 -
3.0 -
1.5 -
3.0 -
1.5 -
1.0 -
7.0
10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1
1
2
2
1
1
1
1
1
1
1
1
Note :
1. Assume tR / tF (input rise and fall time) is 1ns. If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter.
2. Access time to be measured with input signals of 1V/ns edge rate, from 0.8V to 0.2V. If tR > 1ns,
then (tR/2-0.5)ns should be added to the parameter.
www.DataSheet4U.com
Rev 1.0 / Jan. 2007
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet HY5S7B6LFP-S.PDF ] | |
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