|
|
PDF HY5S5B6GLFP-H Data sheet ( Hoja de datos )
| Número de pieza | HY5S5B6GLFP-H | |
| Descripción | 256Mbit (16Mx16bit) Mobile SDR Memory | |
| Fabricantes | Hynix Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HY5S5B6GLFP-H (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
|
No Preview Available !
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
Specification of
256M (16Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x16
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Apr. 2006
1
1 page  
11
256Mbit (16Mx16bit) Mobile SDR Memory
HY5S5B6GLF(P)-xE Series
256Mb Mobile SDR SDRAM ORDERING INFORMATION
Part Number
HY5S5B6GLF-6
HY5S5B6GLF-H
HY5S5B6GLF-S
HY5S5B6GLFP-6
HY5S5B6GLFP-H
HY5S5B6GLFP-S
HY5S5B6GLF-6E
HY5S5B6GLF-HE
HY5S5B6GLF-SE
HY5S5B6GLFP-6E
HY5S5B6GLFP-HE
HY5S5B6GLFP-SE
Clock Fre-
quency
CAS
Latency
Organization Interface
Operation
temperature
54Ball
FBGA
166MHz
3
133MHz
3
Leaded
105MHz
166MHz
3
3
Commercial
Temp
(-0oC ~ 70oC)
133MHz
3
Lead Free
105MHz
166MHz
3
3
4banks x 4Mb x
16
LVCMOS
133MHz
3
Leaded
105MHz
166MHz
3
3
Extended Temp
(-25oC ~ 85oC)
133MHz
3
Lead Free
105MHz
3
Rev 1.0 / Apr. 2006
5
5 Page 
11
256Mbit (16Mx16bit) Mobile SDR Memory
HY5S5B6GLF(P)-xE Series
DC CHARACTERISTICS III - Low Power (IDD6)
Temp.
( oC)
45
85
4 Banks
200
400
Memory Array
2 Banks
140
280
1 Bank
100
200
Unit
uA
uA
Notes:
1. VDD / VDDQ = 1.8V
2. Related numerical values in this 45oC are examples for reference sample value only.
3. With a on-chip temperature sensor of Mobile memory, auto temperature compensated self refresh will automatically
adjust the interval of self-refresh operation according to ambient temperature variations.
Rev 1.0 / Apr. 2006
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet HY5S5B6GLFP-H.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HY5S5B6GLFP-6 | 256Mbit (16Mx16bit) Mobile SDR Memory | Hynix Semiconductor |
| HY5S5B6GLFP-6E | 256Mbit (16Mx16bit) Mobile SDR Memory | Hynix Semiconductor |
| HY5S5B6GLFP-H | 256Mbit (16Mx16bit) Mobile SDR Memory | Hynix Semiconductor |
| HY5S5B6GLFP-HE | 256Mbit (16Mx16bit) Mobile SDR Memory | Hynix Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |