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Numéro de référence | HY5S5B6ELF-SE | ||
Description | 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O | ||
Fabricant | Hynix Semiconductor | ||
Logo | |||
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
Document Title
4Bank x 4M x 16bits Synchronous DRAM
Revision History
Revision No.
History
0.1 Initial Draft
0.2 Modification of IDD Current
0.3
Modification of IDD3P & IDD3PS
IDD3P / IDD3PS : 3mA / 2mA --> 5mA / 5mA
1.0 Final revision
Draft Date
Aug. 2004
Oct. 2004
Jan. 2005
Jul. 2005
Remark
Preliminary
Preliminary
Preliminary
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Jul. 2005
1
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Pages | Pages 27 | ||
Télécharger | [ HY5S5B6ELF-SE ] |
No | Description détaillée | Fabricant |
HY5S5B6ELF-SE | 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O | Hynix Semiconductor |
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