PDF HY5S5B6ELF-HE Data sheet ( Hoja de datos )

Número de pieza	HY5S5B6ELF-HE
Descripción	256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
Fabricantes	Hynix Semiconductor
Logotipo
Hay una vista previa y un enlace de descarga de HY5S5B6ELF-HE (archivo pdf) en la parte inferior de esta página. Total 27 Páginas
No Preview Available ! 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 4Bank x 4M x 16bits Synchronous DRAM Revision History Revision No. History 0.1 Initial Draft 0.2 Modification of IDD Current 0.3 Modification of IDD3P & IDD3PS IDD3P / IDD3PS : 3mA / 2mA --> 5mA / 5mA 1.0 Final revision Draft Date Aug. 2004 Oct. 2004 Jan. 2005 Jul. 2005 Remark Preliminary Preliminary Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Jul. 2005 1 1 page 1 256Mbit (16Mx16bit) Mobile SDR Memory HY5S5B6ELF(P)-xE Series FUNCTIONAL BLOCK DIAGRAM 4Mbit x 4banks x 16 I/O Mobile Synchronous DRAM PASR Extended Mode Register Self refresh logic & timer Internal Row Counter CLK 4Mx16 Bank 3 CKE Row Active Row Pre 4Mx16 Bank 2 4Mx16 Bank 1 CS Decoder 4Mx16 Bank 0 RAS CAS WE U/LDQM Refresh Column Active Column Pre Decoder Memory Cell Array Column decoders DQ0 DQ15 Bank Select Column Add Counter A0 Address A1 Register Burst Counter A12 BA1 Mode Register CAS Latency Data Out Control BA0 Rev 1.0 / Jul. 2005 5 5 Page 1 256Mbit (16Mx16bit) Mobile SDR Memory HY5S5B6ELF(P)-xE Series COMMAND TRUTH TABLE Function Mode Register Set Extended Mode Register Set No Operation Device Deselect Bank Active Read Read with Autoprecharge Write Write with Autoprecharge Precharge All Banks Precharge selected Bank Burst stop Data Write/Output Enable Data Mask/Output Disable Auto Refresh Self Refresh Entry Self Refresh Exit Precharge Power Down Entry Precharge Power Down Exit Clock Suspend Entry Clock Suspend Exit Deep Power Down Entry Deep Power Down Exit CKEn-1 CKEn HX HX HX HX HX HX HX HX HX HX HX HX HX HX HH HL LH HL LH HL LH HL LH CS RAS CAS WE DQM ADDR A10 /AP BA Note LL LL X Op Code 2 LL LL X Op Code 2 LH HH X X HX XX X X LL HH X Row Address V LH LH Column L V L H L H X Column H V L H L L X Column L V L H L L X Column H V LL HL X X HX LL HL X X LV LH HL X X X XX X VX LL LH X X LL LH X X HX XX X X1 LH HH HX LH XX HH X X HX LH XX HH X X HX LV XX VV X X X XX LH HL X X X XX Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high. 2. BA1/BA0 must be issued 0/0 in the mode register set, and 1/0 in the extended mode register set. Rev 1.0 / Jul. 2005 11 11 Page

Páginas	Total 27 Páginas
PDF Descargar	[ Datasheet HY5S5B6ELF-HE.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
HY5S5B6ELF-HE	256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O	Hynix Semiconductor

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar