|
|
Numéro de référence | NSS12100UW3TCG | ||
Description | 12 V 1 A / Low VCE(sat) PNP Transistor | ||
Fabricant | ON Semiconductor | ||
Logo | |||
1 Page
NSS12100UW3TCG
12 V, 1 A, Low VCE(sat)
PNP Transistor
ON Semiconductor's e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
•ăHigh Current Capability (1 A)
•ăHigh Power Handling (Up to 740 mW)
•ăLow VCE(s) (200 mV Typical @ 500 mA)
•ăSmall Size
•ăLow Noise
•ăThis is a Pb-Free Device
Benefits
•ăHigh Specific Current and Power Capability Reduces Required PCB Area
•ăReduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector‐Emitter Voltage
Collector‐Base Voltage
Emitter‐Base Voltage
Collector Current - Continuous
Collector Current - Peak
VCEO
VCBO
VEBO
IC
ICM
-12 Vdc
-12 Vdc
-5.0 Vdc
-1.0 Adc
-2.0
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
www.DRateacSohmemete4nUde.cdoOmperating Conditions may affect device reliability.
http://onsemi.com
12 VOLTS, 1.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 400 mW
COLLECTOR
3
1
BASE
2
EMITTER
2
1
3
WDFN3
CASE 506AU
MARKING DIAGRAM
VG M
G
1
VG = Specific Device Code
M = Date Code
G = Pb-Free Package
ORDERING INFORMATION
Device
Package Shipping†
NSS12100UW3TCG WDFN3
3000/
(Pb-Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 0
1
Publication Order Number:
NSS12100UW3/D
|
|||
Pages | Pages 5 | ||
Télécharger | [ NSS12100UW3TCG ] |
No | Description détaillée | Fabricant |
NSS12100UW3TCG | 12 V 1 A / Low VCE(sat) PNP Transistor | ON Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |