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Microsemi Corporation - UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES

Numéro de référence KV1961A
Description UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES
Fabricant Microsemi Corporation 
Logo Microsemi Corporation 





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KV1961A fiche technique
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UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION
VARACTOR DIODES
DESCRIPTION
The KV 1900 series of super hyperabrupt varactor di-
odes combines low voltage with high ratio tuning. They
feature grown junction mesa technology for the highest
Q commercially available. Passivation is our dense mil
spec silicon dioxide for the lowest 1/F noise and low
leakage even at temperature extremes. They are avail-
able in a wide range of package styles including chip
(style 00) and most other conventional ceramic micro-
wave packages. When ordering, specify the desired
case style by adding its number as a suffix to the basic
model number. For more details on surface mount Super
Hyperabrupt Varactors see the Surface Mount Devices
section.
APPLICATIONS
Low voltage / battery powered equipment from UHF
through Ku band including:
Wide bandwidth VCO’s
Voltage Tunable Filters
Phase Shifters
Modulators
VCXO’s
RATINGS:
Minimum Voltage Breakdown: 12 V @ 10 µA
Maximum Leakage Current: 50 nA @ 10 V / 25°C
Junction Operating Temp.: -55°C to +125°C
Storage Temp.:
-65°C to +200°C
ELECTRICAL SPECIFICATIONS: TA=25°C
MODEL
KV1911A
KV1951A
KV1921A
KV1931A
KV1941A
KV1961A
KV1971A
KV1981A
KV1991A
CJ @ 1 V (pF)
>36.00
>26.00
>17.00
>13.00
> 9.00
> 3.80
> 1.65
> 1.20
> 0.60
CJ @ 2.5 V (pF)
18 - 27
13 - 20
8.3 - 12.8
6.3 - 9.8
4.3 - 6.3
1.8 - 2.8
0.9 - 1.35
0.6 - 0.9
0.3 - 0.6
CJ @ 4 V (pF)
<11.80
< 8.80
< 5.80
< 4.30
< 2.80
< 1.30
< 0.60
< 0.45
< 0.25
CJ @ 8 V (pF)
<6.00
<4.50
<3.00
<2.50
<1.50
<0.80
<0.35
<0.30
<0.15
Q@4V/
50 MHz
400
500
600
750
900
1200
1400
1600
1800
SEMICONDUCTOR OPERATION
75 Technology Drive • Lowell, MA 01851 • Tel: 978-442-5600 • Fax: 978-937-3748
39

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