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DCX56-16 fiches techniques PDF

Diodes - NPN SURFACE MOUNT TRANSISTOR

Numéro de référence DCX56-16
Description NPN SURFACE MOUNT TRANSISTOR
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DCX56-16 fiche technique
DCX56/-16
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DCX53)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
SOT89-3L
COLLECTOR
3 E 2,4
C4 2 C
1
BASE
1B
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
100
80
5
1
1.5
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Symbol
PD
Tj, TSTG
RθJA
Value
1
-55 to +150
125
Unit
W
°C
°C/W
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max Unit
Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
100
80
5.0
V IC = 100μA, IE = 0
V IC = 10mA, IB = 0
V IE = 10μA, IC = 0
Collector-Base Cutoff Current
ICBO
0.1
20
μA VCB = 30V, IE = 0
VCB = 30V, IE = 0, TA = 150°C
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
IEBO
100 nA VEB = 5.0V, IC = 0
DC Current Gain
DCX56, DCX56-16
DCX56
hFE
63
40
63
IC = 5.0mA, VCE = 2.0V
IC = 500mA, VCE = 2.0V
250 IC = 150mA, VCE = 2.0V
www.DCaotllaeSchtoere-Et4mUitt.ecor mSaturation Voltage
DCX56-16
100 250 IC = 150mA, VCE = 2.0V
VCE(SAT)
0.5 V IC = 500mA, IB = 50mA
Base-Emitter Turn-On Voltage
VBE(ON)
1.0 V IC = 500mA, VCE = 2.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
200
MHz
IC = 50mA, VCE = 5V,
f = 100MHz
Output Capacitance
Cobo
15 pF VCB = 10V, IE = 0, f = 1MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
DS31161 Rev. 3 - 2
1 of 4
www.diodes.com
DCX56/-16
© Diodes Incorporated

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