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DCP51-16 fiches techniques PDF

Diodes - PNP SURFACE MOUNT TRANSISTOR

Numéro de référence DCP51-16
Description PNP SURFACE MOUNT TRANSISTOR
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DCP51-16 fiche technique
DCP51/-16
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (DCP54)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification
Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
3
2
1
4
SOT-223
3E
COLLECTOR
2,4
C4 2C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Symbol
VCBO
VCEO
VEBO
ICM
IC
Value
-45
-45
-5
-1.5
-1
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation @ TA = 25°C (Note 3)
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient Air @ TA = 25°C (Note 3)
Symbol
Pd
Tj,TSTG
RθJA
Value
1 (Note 3)
-55 to +150
125
Unit
W
°C
°C/W
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
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DC Current Gain
DCP51-16
SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
VBE(ON)
hFE
Min
-45
-45
-5
40
25
100
Typ
Transition Frequency
fT 200
Max
-100
-10
-10
-0.5
-1.0
250
250
Unit
V
V
V
nA
μA
μA
V
V
MHz
Conditions
IC = -100μA, IE = 0A
IC = -10mA, IB = 0A
IE = -10μA, IC = 0A
VCB = -30V, IE = 0A
VCB = - 30V, IE = 0A, TA = 150°C
VEB = -5V, IC = 0A
IC = -500mA, IB = -50mA
IC = -500mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -50mA, VCE = -5V,
f = 100MHz
Note:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB pad layout as shown on page 4 or on Diodes, Inc. suggested pad layout document AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%
DS31196 Rev. 2 - 2
1 of 4
www.diodes.com
DCP51/-16
© Diodes Incorporated

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