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CHM4600JPT Datasheet دیتاشیت PDF دانلود

دیتاشیت - Chenmko Enterprise - Dual Enhancement Mode Field Effect Transistor

شماره قطعه CHM4600JPT
شرح مفصل Dual Enhancement Mode Field Effect Transistor
تولید کننده Chenmko Enterprise 
آرم Chenmko Enterprise 


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CHM4600JPT شرح
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual Enhancement Mode Field Effect Transistor
N-channel: VOLTAGE 30 Volts CURRENT 7.3 Ampere
P-channel: VOLTAGE 30 Volts CURRENT 4.6 Ampere
CHM4600JPT
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
FEATURE
* Small flat package. (SO-8 )
* Super high dense cell design for extremely low RDS(ON).
* Lead free product is acquired.
* High power and current handing capability.
CONSTRUCTION
* N-Channel & P-Channel Enhancement in the package
CIRCUIT
8D1 D1 D2 D25
SO-8
4.06 (0.160)
3.70 (0.146)
5.00 (0.197)
4.69 (0.185)
1
4
8
5
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
6.20 (0.244)
5.80 (0.228)
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
.25 (0.010)
.17 (0.007)
1S1 G1 S2 G24
Dimensions in millimeters
Absolute Maximum Ratings
Symbol Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TA = 25°C unless otherwise noted
N-Channel
30
±20
P-Channel
-30
±20
Maximum Drain Current - Continuous
ID
- Pulsed (Note 3)
7.3
30
-4.6
-20
PD Maximum Power Dissipation
TJ Operating Temperature Range
2000
-55 to 150
TSTG Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
www.DataSheet4U.com
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
-55 to 150
62.5
SO-8
Units
V
V
A
mW
°C
°C
°C/W
2006-02

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