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PDF DMA206E1 Data sheet ( Hoja de datos )
| Número de pieza | DMA206E1 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
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This product complies with the RoHS Directive (EU 2002/95/EC).
DMA206E1
Silicon PNP epitaxial planar type
For high-frequency amplification
Features
High transition frequency fT
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Basic Part Number
Dual DSA2G01 (Individual)
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
–30
–20
–5
–30
300
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Package
Code
Mini6-G4-B
Pin Name
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
Marking Symbol: C9
Internal Connection
(C1) (B1) (C2)
6 54
Tr2
Tr1
12 3
(E1) (E2) (B2)
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Base-emitter voltage
VBE VCE = –10 V, IC = –1 mA
Collector-base cutoff current (Emitter open) ICBO VCB = –10 V, IE = 0
Collector-emitter cutoff current (Base open) ICEO VCE = –20 V, IB = 0
Emitter-base cutoff current (Collector open) IEBO VEB = –5 V, IC = 0
Forward current transfer ratio
hFE VCE = –10 V, IC = –1 mA
hFE ratio *
hFE
(Small/Large)
VCE = –10 V, IC = –1 mA
Collector-emitter saturation voltage
VCE(sat) IC = –10 mA, IB = –1 mA
Transition frequency
fT VCE = –10 V, IC = –1 mA
Reverse transfer capacitance
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Cre VCE = –10 V, IC = –1 mA, f = 10.7 MHz
70
0.50
150
– 0.7
0.99
– 0.1
300
1.0
– 0.1
–100
–10
220
Noise figure
NF VCE = –10 V, IC = –1 mA, f = 5 MHz
2.8
Reverse transfer impedance
Zrb VCE = –10 V, IC = –1 mA, f = 2 MHz
22
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Unit
V
µA
µA
µA
V
MHz
pF
dB
W
Publication date: September 2010
Ver. AED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DMA206E1.PDF ] | |
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