DataSheetWiki


DMA204A0 fiches techniques PDF

Panasonic Semiconductor - Silicon PNP Epitaxial Transistor

Numéro de référence DMA204A0
Description Silicon PNP Epitaxial Transistor
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





1 Page

No Preview Available !





DMA204A0 fiche technique
This product complies with the RoHS Directive (EU 2002/95/EC).
DMA204A0
Silicon PNP epitaxial planar type
For low frequency amplication
Features
Low collector-emitter saturation voltage VCE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Basic Part Number
Dual DSA2401 (Individual)
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
–15
–10
–7
– 0.5
–1
300
150
–55 to +150
Unit
V
V
V
A
A
mW
°C
°C
Package
Code
Mini6-G4-B
Pin Name
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
Marking Symbol: C0
Internal Connection
(C1) (B2) (E2)
6 54
Tr1 Tr2
12 3
(E1) (B1) (C2)
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
www.DTartaanSshiteioent4fUreq.cuoemncy
VCBO
VCEO
VEBO
ICBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
IC = –10 µA, IE = 0
IC = –1 mA, IB = 0
IE = –10 µA, IC = 0
VCB = –10 V, IE = 0
VCE = –2 V, IC = – 0.5 A
VCE = –2 V, IC = –1 A
IC = – 0.4 A, IB = –8 mA
IC = – 0.4 A, IB = –8 mA
VCE = –10 V, IC = –50 mA
–15
–10
–7
–100
130 350
60
– 0.15 – 0.30
– 0.8 –1.2
250
Collector output capacitance
(Common base, input open circuited)
Cob VCB = –10 V, IE = 0, f = 1 MHz
18
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Unit
V
V
V
nA
V
V
MHz
pF
Publication date: June 2010
ZJJ00608AED
1

PagesPages 4
Télécharger [ DMA204A0 ]


Fiche technique recommandé

No Description détaillée Fabricant
DMA204A0 Silicon PNP Epitaxial Transistor Panasonic Semiconductor
Panasonic Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche