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Numéro de référence | DE3S062D | ||
Description | Silicon epitaxial planar type | ||
Fabricant | Panasonic Semiconductor | ||
Logo | |||
1 Page
This product complies with the RoHS Directive (EU 2002/95/EC).
DE3S062D
Silicon epitaxial planar type
For surge absorption circuits
Features
High electrostatic discharge ESD
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Total power dissipation *1
PT
Electrostatic discharge *2
ESD
Rating
150
±30
Unit
mW
kV
Junction temperature
Tj 150 °C
Storage temperature
Tstg –55 to +150 °C
Note) *1: PT = 150 mW achieved with a printed circuit board.
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 W, Contact discharge: 10 times)
Package
Code
SSMini3-F3-B
Pin Name
1: Cathode-1
2: Cathode-2
3: Anode-1, 2
Marking Symbol: 41
Internal Connection
3
12
Common Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Zener voltage *1, 2
VZ IZ = 1 mA
5.89 6.51 V
Reverse current
IR VR = 4 V
1 µA
Terminal capacitance
Temperature coefficient of zener voltage *3
Ct VR = 0 V, f = 1 MHz
SZ IZ = 1 mA
55 pF
2.3 mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranteed 20 ms after current flow.
*3: Tj = 25°C to 150°C
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Publication date: November 2010
Ver. AED
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Pages | Pages 4 | ||
Télécharger | [ DE3S062D ] |
No | Description détaillée | Fabricant |
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