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Panasonic Semiconductor - Silicon epitaxial planar type

Numéro de référence DB22306
Description Silicon epitaxial planar type
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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DB22306 fiche technique
This product complies with the RoHS Directive (EU 2002/95/EC).
DB22306
Silicon epitaxial planar type
For rectication
Features
Low forward voltage VF
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average) *1
Non-repetitive peak forward surge current *2
VR
VRRM
IF(AV)
IFSM
30
30
2
30
Junction temperature
Tj 125
Storage temperature
Tstg –55 to +125
Note) *1: Lead temperature: T1 = 80°C, DC wave on.
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
V
A
A
°C
°C
Package
Code
Mini2-F4-B
Pin Name
1: Cathode
2: Anode
Marking Symbol: A4
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF1 IF = 1.0 A
VF2 IF = 2.0 A
0.4
V
0.45
Reverse current
IR VR = 30 V
500 µA
Terminal capacitance
Ct VR = 10 V, f = 1 MHz
43 pF
Reverse recovery time *
trr
IF = IR = 100 mA, Irr = 10 mA,
RL = 100
13 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
www.DataSheet4U.com
A
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
IF = 10 mA
IR = 10 mA
RL = 100
Irr = 10 mA
Publication date: October 2010
Ver. BED
1

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