DataSheetWiki


BAS21DW fiches techniques PDF

Diodes - SURFACE MOUNT LOW LEAKAGE DIODE

Numéro de référence BAS21DW
Description SURFACE MOUNT LOW LEAKAGE DIODE
Fabricant Diodes 
Logo Diodes 





1 Page

No Preview Available !





BAS21DW fiche technique
BAS20DW-BAS21DW
SURFACE MOUNT LOW LEAKAGE DIODE
Please click here to visit our online spice models database.
Features
Mechanical Data
Fast Switching Speed
Surface Mount Package Ideally Suited for Automated Insertion
High Reverse Breakdown Voltage
Low Leakage Current
Lead Free By Design/RoHS Compliant (Note 3)
"Green" Device (Notes 4 and 5)
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.003 grams (approximate)
SOT-363
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
Repetitive Peak Forward Surge Current
@ t = 1.0μs
@ t = 1.0s
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
IFRM
BAS20DW
200
150
106
BAS21DW
250
200
141
400
200
2.5
0.5
625
Unit
V
V
V
mA
mA
A
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
www.DR@aetvRaeaSrtsheeedeCDtu4CrUreB.nclotocmking Voltage (Note 2)
Total Capacitance
Reverse Recovery Time
BAS20DW
BAS21DW
Symbol
V(BR)R
VF
IR
CT
trr
Min
200
250
Max
1.0
1.25
100
15
5.0
50
Unit
V
V
nA
μA
pF
ns
Test Condition
IR = 100μA
IF = 100mA
IF = 200mA
Tj = 25°C
Tj = 100°C
VR = 0, f = 1.0MHz
IF = IR = 30mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BAS20DW-BAS21DW
Document number: DS30617 Rev. 10 - 2
1 of 4
www.diodes.com
May 2009
© Diodes Incorporated

PagesPages 4
Télécharger [ BAS21DW ]


Fiche technique recommandé

No Description détaillée Fabricant
BAS21DW SURFACE MOUNT LOW LEAKAGE DIODE Diodes
Diodes
BAS21DW5 High Voltage Switching Diode ON Semiconductor
ON Semiconductor
BAS21DW5T1 (BAS19LT1 - BAS21xxx1) High Voltage Switching Diode ON Semiconductor
ON Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche