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EIB1819-2P Datasheet دیتاشیت PDF دانلود

دیتاشیت - Excelics Semiconductor - 18.7-19.7GHz 2W Internally Matched Power FET

شماره قطعه EIB1819-2P
شرح مفصل 18.7-19.7GHz 2W Internally Matched Power FET
تولید کننده Excelics Semiconductor 
آرم Excelics Semiconductor 


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EIB1819-2P شرح
Excelics
EIA/EIB1819-2P
Not recommended for new designs. Contact factory. Effective 03/2003
18.7-19.7GHz, 2W Internally Matched Power FET
18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
EIA FEATURES HIGH PAE( 25% TYPICAL)
EIB FEATURES HIGH IP3(46dBm TYPICAL)
+33.0/+32.5dBm TYPICAL P1dB OUTPUT POWER FOR
EIA/EIB
6.0/5.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Output Power at 1dB Compression f=18.7-19.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Gain at 1dB Compression
f=18.7-19.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Power Added Efficiency at 1dB compression
f=18.7-19.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Id1dB
IP3
Drain Current at 1dB Compression
Output 3rd Order Intercept Point f=18.7-19.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
EIA1819-2P
MIN TYP MAX
32.0 33.0
5.5 6.0
25
880
40
Idss Saturated Drain Current Vds=3V, Vgs=0V
1100 1440 1700
EIB1819-2P
MIN TYP MAX
32.0 32.5
4.5 5.0
20
850
46*
1100 1360 1700
UNIT
dBm
dB
%
mA
dBm
mA
Gm Transconductance Vds=3V, Vgs=0V
1500
700 mS
Vp Pinch-off Voltage Vds=3V, Ids=12mA
-1.0 -2.5
-2.0 -3.5
V
BVgd Drain Breakdown Voltage Igd=4.8mA
Rth Thermal Resistance (Au-Sn Eutectic Attach)
*Typical –45dBc IM3 at Pout=23dBm/Tone
-13 -15
8
-15 V
8 oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
12V
Vgs Gate-Source Voltage
-8V
Ids Drain Current
Idss
Igsf Forward Gate Current
180mA
Pin
www.DataSheet4U.comTch
Tstg
Input Power
Channel Temperature
Storage Temperature
32dBm
175oC
-65/175oC
Pt Total Power Dissipation
17W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
8V
-3V
Idss
30mA
@ 3dB Compression
150oC
-65/150oC
14.2W
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com

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شماره قطعه شرح مفصل تولید کنندگان
EIB1819-2P Internally Matched Power FET Excelics Semiconductor
Excelics Semiconductor
EIB1819-2P 18.7-19.7GHz 2W Internally Matched Power FET Excelics Semiconductor
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